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2018 IEEE International Memory Workshop (IMW)
Latest Publications
TOTAL DOCUMENTS
51
(FIVE YEARS 0)
H-INDEX
4
(FIVE YEARS 0)
Published By IEEE
9781538652473
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Most Cited Documents
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Latest Documents
Most Cited Documents
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[Title page]
2018 IEEE International Memory Workshop (IMW)
◽
10.1109/imw.2018.8388766
◽
2018
◽
Keyword(s):
Title Page
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Enhancing Magnetic Immunity of STT-MRAM with Magnetic Shielding
2018 IEEE International Memory Workshop (IMW)
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10.1109/imw.2018.8388828
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2018
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Cited By ~ 1
Author(s):
Bharat Bhushan
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Lim Teck Guan
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Danny Shum
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Eva Wai Leong Ching
◽
Boo Yang Jung
◽
...
Keyword(s):
Magnetic Shielding
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Temperature Limits of Single and Composite Storage Layer with Different Thicknesses and Capping Materials for p-STT-MRAM Applications
2018 IEEE International Memory Workshop (IMW)
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10.1109/imw.2018.8388854
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2018
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Author(s):
Luc Tillie
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Jyotirmoy Chatterjee
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Ricardo Sousa
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Stephane Auffret
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Jude Guelfucci
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...
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40nm & 22nm Embedded Charge Trap Flash for Automotive Applications
2018 IEEE International Memory Workshop (IMW)
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10.1109/imw.2018.8388778
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2018
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Cited By ~ 3
Author(s):
James Pak
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Chun Chen
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Kuo-Tung Chang
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Shiva Shetty
◽
Amy Tu
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...
Keyword(s):
Automotive Applications
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Charge Trap
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DRAM Retention at Cryogenic Temperatures
2018 IEEE International Memory Workshop (IMW)
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10.1109/imw.2018.8388826
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2018
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Cited By ~ 5
Author(s):
Fiona Wang
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Thomas Vogelsang
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Brent Haukness
◽
Stephen C. Magee
Keyword(s):
Cryogenic Temperatures
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The Analysis of Erase Voltage Variability in 70-nm Split-Gate Flash Memory Arrays
2018 IEEE International Memory Workshop (IMW)
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10.1109/imw.2018.8388855
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2018
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Author(s):
Yuri Tkachev
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Jong-Won Yoo
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Alexander Kotov
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Lawrence T. Clark
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Keith E. Holbert
Keyword(s):
Flash Memory
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Memory Arrays
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Study of Thyristor-Mode Dual-Channel NAND Flash Devices
2018 IEEE International Memory Workshop (IMW)
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10.1109/imw.2018.8388851
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2018
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Author(s):
Roger Lo
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Hang-Ting Lue
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Wei-Chen Chen
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Pei-Ying Du
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Tzu-Hsuan Hsu
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...
Keyword(s):
Nand Flash
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Dual Channel
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Low Cost Diode as Selector Device for Embedded Phase Change Memory in Advanced FD-SOI Technology
2018 IEEE International Memory Workshop (IMW)
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10.1109/imw.2018.8388839
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2018
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Cited By ~ 1
Author(s):
Jean-Jacques Fagot
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Philippe Boivin
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Vincenzo Della-Marca
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Jeremie Postel-Pellerin
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Damien Deleruyelle
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...
Keyword(s):
Phase Change
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Low Cost
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Phase Change Memory
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Soi Technology
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Change Memory
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Error Characterization and ECC Usage Relaxation beyond 20nm Floating Gate NAND Flash Memory
2018 IEEE International Memory Workshop (IMW)
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10.1109/imw.2018.8388829
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2018
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Author(s):
S.H. Ku
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T.W. Lin
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C.H. Cheng
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C.W. Lee
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Ti-Wen Chen
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...
Keyword(s):
Flash Memory
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Floating Gate
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Nand Flash
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Nand Flash Memory
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Error Characterization
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Study of Counter-Pulse (CP) Programming Method to Improve the Vt Distribution for 3D Charge-Trapping NAND Flash Devices
2018 IEEE International Memory Workshop (IMW)
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10.1109/imw.2018.8388850
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2018
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Cited By ~ 1
Author(s):
Yung Chun Lee
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Wei-Chen Chen
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Hang-Ting Lue
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Chih-Chang Hsieh
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Kuo-Ping Chang
◽
...
Keyword(s):
Charge Trapping
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Programming Method
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Nand Flash
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