The Analysis of Erase Voltage Variability in 70-nm Split-Gate Flash Memory Arrays

Explanation of SILC Probability Density Distributions With Nonuniform Generation of Traps in the Tunnel Oxide of Flash Memory Arrays

10.1109/ted.2007.901262 ◽

2007 ◽

Vol 54 (8) ◽

pp. 1953-1962 ◽

Cited By ~ 10

Author(s):

Elisa Vianello ◽

Francesco Driussi ◽

David Esseni ◽

Luca Selmi ◽

Frans Widdershoven ◽

...

Keyword(s):

Probability Density ◽

Flash Memory ◽

Density Distributions ◽

Memory Arrays ◽

Probability Density Distributions

A Compact Model for Erratic Event Simulation in Flash Memory Arrays

10.1109/ted.2014.2356211 ◽

2014 ◽

Vol 61 (11) ◽

pp. 3716-3722 ◽

Cited By ~ 4

Author(s):

Cristian Zambelli ◽

Tommaso Vincenzi ◽

Piero Olivo

Keyword(s):

Flash Memory ◽

Compact Model ◽

Event Simulation ◽

RTN Effects in Scaled Flash Memory Arrays

10.7567/ssdm.2007.b-10-1 ◽

2007 ◽

Author(s):

A. S. Spinelli ◽

C. Monzio Compagnoni ◽

R. Gusmeroli ◽

M. Ghidotti ◽

A. L. Lacaita

Keyword(s):

Flash Memory ◽

A Statistical Model of Erratic Behaviors in Flash Memory Arrays

10.1109/ted.2011.2165722 ◽

2011 ◽

Vol 58 (11) ◽

pp. 3707-3711 ◽

Cited By ~ 13

Author(s):

Andrea Chimenton ◽

Cristian Zambelli ◽

Piero Olivo

Keyword(s):

Statistical Model ◽

Flash Memory ◽

2015 6th IEEE International Conference on Software Engineering and Service Science (ICSESS) ◽

Independent bad block management for mass storage flash memory arrays

10.1109/icsess.2015.7339081 ◽

2015 ◽

Author(s):

Yongfeng Ma ◽

Hanping Du ◽

Shaobo Yang

Keyword(s):

Flash Memory ◽

Mass Storage ◽

Does Multi-Trap Assisted Tunneling explain the oxide thickness dependence of the Statistics of SILC in FLASH Memory Arrays?

2006 European Solid-State Device Research Conference ◽

10.1109/essder.2006.307723 ◽

2006 ◽

Cited By ~ 3

Author(s):

E. Vianello ◽

F. Driussi ◽

D. Esseni ◽

L. Selmi ◽

M.J. van Duuren ◽

...

Keyword(s):

Flash Memory ◽

Oxide Thickness ◽

Thickness Dependence ◽

Trap Assisted Tunneling ◽

Assisted Tunneling ◽

Experimental Characterization of Statistically Independent Defects in Gate Dielectrics—Part II: Experimental Results on Flash Memory Arrays

10.1109/ted.2005.846350 ◽

2005 ◽

Vol 52 (5) ◽

pp. 949-954 ◽

Cited By ~ 4

Author(s):

F. Driussi ◽

F. Widdershoven ◽

D. Esseni ◽

L. Selmi ◽

M.J. vanDuuren

Keyword(s):

Flash Memory ◽

Gate Dielectrics ◽

Experimental Results ◽

Experimental Characterization ◽

Random Telegraph Noise-Induced Sensitivity of Data Retention to Cell Position in the Programmed Distribution of NAND Flash Memory Arrays

IEEE Electron Device Letters ◽

10.1109/led.2015.2428282 ◽

2015 ◽

Vol 36 (7) ◽

pp. 678-680 ◽

Cited By ~ 2

Author(s):

Davide Resnati ◽

Christian Monzio Compagnoni ◽

Giovanni M. Paolucci ◽

Carmine Miccoli ◽

Alessandro S. Spinelli ◽

...

Keyword(s):

Flash Memory ◽

Nand Flash ◽

Nand Flash Memory ◽

Data Retention ◽

Random Telegraph Noise ◽

Cell Position ◽

Telegraph Noise ◽

Radiation Tolerance of Nanocrystal-Based Flash Memory Arrays Against Heavy Ion Irradiation

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2007.908757 ◽

2007 ◽

Vol 54 (6) ◽

pp. 2196-2203 ◽

Cited By ~ 8

Author(s):

Andrea Cester ◽

Nicola Wrachien ◽

Alberto Gasperin ◽

Alessandro Paccagnella ◽

Rosario Portoghese ◽

...

Keyword(s):

Flash Memory ◽

Ion Irradiation ◽

Heavy Ion ◽

Radiation Tolerance ◽

Heavy Ion Irradiation ◽

Single Event Effects in NAND Flash Memory Arrays

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2006.880944 ◽

2006 ◽

Vol 53 (4) ◽

pp. 1813-1818 ◽

Cited By ~ 18

Author(s):

G. Cellere ◽

A. Paccagnella ◽

A. Visconti ◽

M. Bonanomi ◽

S. Beltrami

Keyword(s):

Flash Memory ◽

Nand Flash ◽

Single Event ◽

Nand Flash Memory ◽

Single Event Effects ◽