2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers
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9781479933327, 9781479933310, 9781479933303

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Applying a redundancy scheme to address post-assembly yield loss in 3D FPGAs

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers ◽

10.1109/vlsit.2014.6894396 ◽

2014 ◽

Author(s):

Rafael C Camarota ◽

Jennifer Wong ◽

Henley Liu ◽

Pat McGuire

Keyword(s):

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Tailoring switching and endurance / retention reliability characteristics of HfO2 / Hf RRAM with Ti, Al, Si dopants

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers ◽

10.1109/vlsit.2014.6894403 ◽

2014 ◽

Author(s):

Y. Y. Chen ◽

R. Roelofs ◽

A. Redolfi ◽

R. Degraeve ◽

D. Crotti ◽

...

Keyword(s):

Reliability Characteristics

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TSV technology and challenges for 3D stacked DRAM

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers ◽

10.1109/vlsit.2014.6894397 ◽

2014 ◽

Author(s):

Chang Yeol Lee ◽

Sungchul Kim ◽

Hongshin Jun ◽

Kyung Whan Kim ◽

Sung Joo Hong

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Thermally robust CMOS-aware Ge MOSFETs with high mobility at high-carrier densities on a single orientation Ge substrate

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers ◽

10.1109/vlsit.2014.6894394 ◽

2014 ◽

Author(s):

C. H. Lee ◽

C. Lu ◽

T. Nishimura ◽

K. Nagashio ◽

A. Toriumi

Keyword(s):

High Mobility ◽

High Carrier ◽

Single Orientation

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A highly scalable STT-MRAM fabricated by a novel technique for shrinking a magnetic tunnel junction with reducing processing damage

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers ◽

10.1109/vlsit.2014.6894365 ◽

2014 ◽

Author(s):

Y. Iba ◽

A. Takahashi ◽

A. Hatada ◽

M. Nakabayashi ◽

C. Yoshida ◽

...

Keyword(s):

Tunnel Junction ◽

Magnetic Tunnel Junction ◽

Novel Technique

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A novel metallic complex reaction etching for transition metal and magnetic material by low-temperature and damage-free neutral beam process for non-volatile MRAM device applications

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers ◽

10.1109/vlsit.2014.6894362 ◽

2014 ◽

Author(s):

Xun Gu ◽

Yoshiyuki Kikuchi ◽

Toshihisa Nozawa ◽

Seiji Samukawa

Keyword(s):

Magnetic Material ◽

Low Temperature ◽

Transition Metal ◽

Neutral Beam ◽

Complex Reaction ◽

Device Applications ◽

Metallic Complex

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A high-density logic CMOS process compatible non-volatile memory for sub-28nm technologies

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers ◽

10.1109/vlsit.2014.6894353 ◽

2014 ◽

Author(s):

Rick Shih-Jye Shen ◽

Meng-Yi Wu ◽

Hsin-Ming Chen ◽

Chris Chun-Hung Lu

Keyword(s):

High Density ◽

Cmos Process ◽

Non Volatile Memory ◽

Volatile Memory

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1T-1R pillar-type topological-switching random access memory (TRAM) and data retention of GeTe/Sb2Te3 super-lattice films

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers ◽

10.1109/vlsit.2014.6894436 ◽

2014 ◽

Author(s):

M. Tai ◽

T. Ohyanagi ◽

M. Kinoshita ◽

T. Morikawa ◽

K. Akita ◽

...

Keyword(s):

Random Access ◽

Random Access Memory ◽

Data Retention ◽

Access Memory ◽

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Role of the Ta scavenger electrode in the excellent switching control and reliability of a scalable low-current operated TiN\Ta2O5\Ta RRAM device

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers ◽

10.1109/vlsit.2014.6894401 ◽

2014 ◽

Author(s):

L. Goux ◽

A. Fantini ◽

A. Redolfi ◽

C.Y. Chen ◽

F.F. Shi ◽

...

Keyword(s):

Switching Control

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Group IV channels for 7nm FinFETs: Performance for SoCs power and speed metrics

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers ◽

10.1109/vlsit.2014.6894380 ◽

2014 ◽

Author(s):

M. Garcia Bardon ◽

P. Raghavan ◽

G. Eneman ◽

P. Schuddinck ◽

M. Dehan ◽

...

Keyword(s):

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