Thermally robust CMOS-aware Ge MOSFETs with high mobility at high-carrier densities on a single orientation Ge substrate

2014 ◽  
Author(s):  
C. H. Lee ◽  
C. Lu ◽  
T. Nishimura ◽  
K. Nagashio ◽  
A. Toriumi
Keyword(s):  
High Mobility ◽  
High Carrier ◽  
Single Orientation

High mobility in α-phosphorene isostructures with low deformation potential

2020 ◽  
Vol 22 (4) ◽  
pp. 2276-2282 ◽  
Author(s):  
Ruhao Fang ◽  
Xiangyuan Cui ◽  
Catherine Stampfl ◽  
Simon P. Ringer ◽  
Rongkun Zheng
Keyword(s):  
Carrier Mobility ◽  
High Mobility ◽  
Deformation Potential ◽  
High Carrier Mobility ◽  
High Carrier

The exceptionally low deformation potential is proposed as the key determinant for the high carrier mobility in ten possible α-phosphorene isostructures.

High mobility single crystalline ScN and single-orientation epitaxial YN on sapphire via magnetron sputtering

2008 ◽  
Vol 104 (7) ◽  
pp. 074913 ◽  
Author(s):  
John M. Gregoire ◽  
Steven D. Kirby ◽  
George E. Scopelianos ◽  
Felix H. Lee ◽  
R. Bruce van Dover
Keyword(s):  
Magnetron Sputtering ◽  
High Mobility ◽  
Single Crystalline ◽  
Single Orientation

Systematic study of methanol addition to enhance the film development of APCVD tin oxide

2011 ◽  
Vol 1323 ◽  
Author(s):  
Joop van Deelen ◽  
Ioanna Volintiru ◽  
Paul Poodt
Keyword(s):  
Tin Oxide ◽  
Vapor Deposition ◽  
High Mobility ◽  
Chemical Vapor ◽  
Deposition Process ◽  
High Carrier Concentration ◽  
Main Effect ◽  
Stagnant Point ◽  
High Carrier ◽  
Film Development

ABSTRACTUndoped tin oxide (SnO2) thin films have been deposited in a stagnant point flow chemical vapor deposition reactor. By adding methanol during the deposition process ten times more conductive SnO2 films are obtained, with remarkably high mobility values of up to 55 cm2/Vs. The investigations on the morphological and structural properties indicate that the main effect of methanol is the densification of the SnO2 films, which probably causes the improvement in the electrical properties. In all conditions the nucleation and coalescence phases take place very early in the growth. The films are already very conductive at a thickness below 10 nm, which is very beneficial to applications that have strict requirements in terms of film transparency. This high conductivity was attributed to a high carrier concentration, obtained without intentional doping.

scholarly journals Reversible writing of high-mobility and high-carrier-density doping patterns in two-dimensional van der Waals heterostructures

2020 ◽  
Vol 3 (2) ◽  
pp. 99-105 ◽  
Author(s):  
Wu Shi ◽  
Salman Kahn ◽  
Lili Jiang ◽  
Sheng-Yu Wang ◽  
Hsin-Zon Tsai ◽  
...  
Keyword(s):  
Carrier Density ◽  
Van Der Waals ◽  
High Mobility ◽  
Two Dimensional ◽  
Van Der Waals Heterostructures ◽  
High Carrier

scholarly journals High mobility in a van der Waals layered antiferromagnetic metal

2020 ◽  
Vol 6 (6) ◽  
pp. eaay6407 ◽  
Author(s):  
Shiming Lei ◽  
Jingjing Lin ◽  
Yanyu Jia ◽  
Mason Gray ◽  
Andreas Topp ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Carrier Mobility ◽  
Magnetic Order ◽  
Van Der Waals ◽  
High Mobility ◽  
Fundamental Physics ◽  
Spintronic Devices ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Very High

Van der Waals (vdW) materials with magnetic order have been heavily pursued for fundamental physics as well as for device design. Despite the rapid advances, so far, they are mainly insulating or semiconducting, and none of them has a high electronic mobility—a property that is rare in layered vdW materials in general. The realization of a high-mobility vdW material that also exhibits magnetic order would open the possibility for novel magnetic twistronic or spintronic devices. Here, we report very high carrier mobility in the layered vdW antiferromagnet GdTe3. The electron mobility is beyond 60,000 cm2 V−1 s−1, which is the highest among all known layered magnetic materials, to the best of our knowledge. Among all known vdW materials, the mobility of bulk GdTe3 is comparable to that of black phosphorus. By mechanical exfoliation, we further demonstrate that GdTe3 can be exfoliated to ultrathin flakes of three monolayers.

scholarly journals Influence of Sputtering Power on the Electrical Properties of In-Sn-Zn Oxide Thin Films Deposited by High Power Impulse Magnetron Sputtering

Coatings ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 715 ◽  
Author(s):  
Zhi-Yue Li ◽  
Sheng-Chi Chen ◽  
Qiu-Hong Huo ◽  
Ming-Han Liao ◽  
Ming-Jiang Dai ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Carrier Concentration ◽  
High Power ◽  
High Mobility ◽  
Electrical Performance ◽  
Glass Substrates ◽  
Sputtering Power ◽  
High Carrier

In-Sn-Zn oxide (ITZO) thin films have been studied as a potential material in flat panel displays due to their high carrier concentration and high mobility. In the current work, ITZO thin films were deposited on glass substrates by high-power impulse magnetron sputtering (HiPIMS) at room temperature. The influence of the sputtering power on the microstructures and electrical performance of ITZO thin films was investigated. The results show that ITZO thin films prepared by HiPIMS were dense and smooth. There were slight variations in the composition of ITZO thin films deposited at different sputtering powers. With the sputtering power increasing from 100 W to 400 W, the film’s crystallinity was enhanced. When the sputtering power was 400 W, an In2O3 (104) plane could be detected. Films with optimal electrical properties were produced at a sputtering power of 300 W, a carrier mobility of 31.25 cm2·V−1·s−1, a carrier concentration of 9.11 × 1018 cm−3, and a resistivity of 2.19 × 10−4 Ω·m.

High Mobility Non-Hydrogenated Low Temperature Polysilicon TFTs

1994 ◽  
Vol 345 ◽  
Author(s):  
F. Plais ◽  
P. Legagneux ◽  
T. Kretz ◽  
R. Stroh ◽  
O. Huet ◽  
...  
Keyword(s):  
Electron Cyclotron Resonance ◽  
Solid Phase ◽  
Plasma Deposition ◽  
Chemical Vapour ◽  
High Mobility ◽  
Hot Carrier ◽  
High Carrier ◽  
Hot Carrier Effects ◽  
Resonance Plasma ◽  
Hydrogenation Treatment

AbstractWe have fabricated polysilicon (poly-Si) thin film transistors (TFTs) using a standard 4-mask sequence, with self-aligned ion implantation for source and drain doping. The active layer was obtained by solid phase crystallisation of high purity Si2H6-deposited amorphous Si, whereas the gate oxide was synthesised by a novel plasma deposition technique, namely distributed electron cyclotron resonance plasma enhanced chemical vapour deposition (DECR PECVD). We have obtained high carrier mobilities (70 cm2V−1s−1 for electrons and 40 cm2V−1s−1 for holes) with an excellent uniformity and without the need for a post-hydrogenation treatment. Moreover, we show that the TFT characteristics are practically insensitive to hot carrier effects.

scholarly journals Perovskite oxides as transparent semiconductors: a review

2020 ◽  
Vol 7 (1) ◽  
Author(s):  
Haiying He ◽  
Zhihao Yang ◽  
Yonghang Xu ◽  
Andrew T. Smith ◽  
Guangguang Yang ◽  
...  
Keyword(s):  
Transparent Conducting Oxides ◽  
High Mobility ◽  
Perovskite Oxides ◽  
High Carrier Concentration ◽  
Trade Off ◽  
Conducting Oxides ◽  
Transparent Conducting ◽  
High Carrier ◽  
P Type ◽  
Transparent Semiconductors

Abstract Traditional transparent conducting oxides (TCOs) have been widely used for various optoelectronic applications, but have the trade-off between conductivity and transmittance. Recently, perovskite oxides, with structural and chemical stability, have exhibited excellent physical properties as new TCOs. We focus on SrVO3-based perovskites with a high carrier concentration and BaSnO3-based perovskites with a high mobility for n-type TCOs. In addition, p-type perovskites are discussed, which can serve as potential future options to couple with n-type perovskites to design full perovskite based devices.

scholarly journals Flexible Diodes/Transistors Based on Tunable p-n-Type Semiconductivity in Graphene/Mn-Co-Ni-O Nanocomposites

Research ◽  
2021 ◽  
Vol 2021 ◽  
pp. 1-8
Author(s):  
Lihong Su ◽  
Zhou Yang ◽  
Xitong Wang ◽  
Ziao Zou ◽  
Bo Wang ◽  
...  
Keyword(s):  
Future Development ◽  
Carrier Lifetime ◽  
Electron Tunneling ◽  
High Mobility ◽  
Xps Analysis ◽  
Manganese Ions ◽  
High Carrier Concentration ◽  
High Carrier ◽  
Graphene Content ◽  
P Type

We report a novel Mn-Co-Ni-O (MCN) nanocomposite in which the p-type semiconductivity of Mn-Co-Ni-O can be manipulated by addition of graphene. With an increase of graphene content, the semiconductivity of the nanocomposite can be tuned from p-type through electrically neutral to n-type. The very low effective mass of electrons in graphene facilitates electron tunneling into the MCN, neutralizing holes in the MCN nanoparticles. XPS analysis shows that the multivalent manganese ions in the MCN nanoparticles are chemically reduced by the graphene electrons to lower-valent states. Unlike traditional semiconductor devices, electrons are excited from the filled graphite band into the empty band at the Dirac points from where they move freely in the graphene and tunnel into the MCN. The new composite film demonstrates inherent flexibility, high mobility, short carrier lifetime, and high carrier concentration. This work is useful not only in manufacturing flexible transistors, FETs, and thermosensitive and thermoelectric devices with unique properties but also in providing a new method for future development of 2D-based semiconductors.

scholarly journals Ab-Initio Study of Electronic and Structural Properties for BaSnO3 Compound Using DFT Calculations and FP-LAPW Technique in Wein2k Software

2021 ◽  
Author(s):  
Zubair Ashraf ◽  
Daud Rafique ◽  
Tahir Mehmood ◽  
Daniyal Akbar
Keyword(s):  
Electronic Properties ◽  
Structural Properties ◽  
Experimental Studies ◽  
High Mobility ◽  
Cubic Phase ◽  
Wide Range ◽  
Structural And Electronic Properties ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Valence Bands

Abstract (Perovskites Photovoltaic) PPV cells are the hottest topics in solar cells in the recent years, because of the remarkable structural and electronic properties and hence rapid progress in material science. The Challenge associated with high-mobility BaSnO3 films is to grow. It shows high carrier mobility and UV-visible transparency has been attracting more and more attention as a very promising component for the next generation opto-electronics. Here, we demonstrate a Structural and Electronics properties (Sp and Ep), To characterize this compound theoretical calculation have been performed by using first principal method and the results show BaSnO3 is conductor at 0eV i.e. room temperature and gaining energy make more conduction transferring more electrons from conduction to valence bands. BaSnO3 shows 5.78e.v maximum for the conduction. We have studied this compound in ideal cubic phase. At 0° Kelvin calculation are performed to get different properties. No experimental studies have been done on this compound. And it was difficult to accumulate its experimental data. WC-GGA is used for the study of structural properties of BaSnO3. This Correlation potential can also be used for the calculation of the various perovskite. Depending on the cubic (ABX3) composition, perovskites exhibit a wide range of structural and electronic properties, which are optimized for different applications.

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