2013 13th International Workshop on Junction Technology (IWJT)
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29

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Published By IEEE

9781479905805, 9781479905782, 9781479905799

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Progress and prospects of silicon transistors based on junction technologies

2013 13th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2013.6644515 ◽

2013 ◽

Author(s):

Hitoshi Wakabayashi

Keyword(s):

Silicon Transistors

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Junction technology in SiC for high-voltage power devices

2013 13th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2013.6644492 ◽

2013 ◽

Author(s):

Tsunenobu Kimoto ◽

Koutarou Kawahara ◽

Hiroki Niwa ◽

Takafumi Okuda ◽

Jun Suda

Keyword(s):

High Voltage ◽

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Damage control with cluster ion implantation

2013 13th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2013.6644497 ◽

2013 ◽

Author(s):

Shigeki Sakai ◽

Nariaki Hamamoto ◽

Yoshiki Nakashima ◽

Hiroshi Onoda

Keyword(s):

Ion Implantation ◽

Damage Control ◽

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Advanced power semiconductor technologies for efficient energy conversion

2013 13th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2013.6644505 ◽

2013 ◽

Author(s):

Gourab Majumdar

Keyword(s):

Energy Conversion ◽

Power Semiconductor ◽

Efficient Energy

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A low temperature Ohmic contact process for n-type Ge substrates

2013 13th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2013.6644500 ◽

2013 ◽

Author(s):

K. Kakushima ◽

R. Yoshihara ◽

K. Tsutsui ◽

H. Iwai

Keyword(s):

Low Temperature ◽

Ohmic Contact ◽

Contact Process

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High dose dopant implantation to heated Si substrate without amorphous layer formation

2013 13th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2013.6644507 ◽

2013 ◽

Author(s):

Hiroshi Onoda ◽

Yoshiki Nakashima ◽

Tsutomu Nagayama ◽

Shigeki Sakai

Keyword(s):

Amorphous Layer ◽

High Dose ◽

Layer Formation ◽

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Formation of arsenic segregated Ytterbium and Nickel silicide using microwave annealing

2013 13th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2013.6644499 ◽

2013 ◽

Author(s):

Ming-Kun Huang ◽

Wen-Fa Wu ◽

Chun-Hsing Shih ◽

Shen-Li Chen

Keyword(s):

Nickel Silicide ◽

Microwave Annealing

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Metal gate work function modulation by ion implantation for multiple threshold voltage FinFET devices

2013 13th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2013.6644516 ◽

2013 ◽

Author(s):

Keping Han ◽

Peng-Fu Hsu ◽

Matthew Beach ◽

Todd Henry ◽

Naomi Yoshida ◽

...

Keyword(s):

Ion Implantation ◽

Work Function ◽

Threshold Voltage ◽

Multiple Threshold ◽

Gate Work Function

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Strain-induced I-V characteristics modulation of p-n junctions and MOS capacitors in Si CMOS devices

2013 13th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2013.6644514 ◽

2013 ◽

Author(s):

Yi Zhao ◽

Wangran Wu ◽

Jiabao Sun ◽

Yi Shi

Keyword(s):

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A study of new type CMOS inverter with Gated-IIP load and TFET driver for 22nm technology node

2013 13th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2013.6644518 ◽

2013 ◽

Author(s):

Hsueh-Liang Huang ◽

Jyi-Tsong Lin ◽

Chen-Chi Tsai ◽

Kuan-Yu Chen ◽

You-Ren Lu ◽

...

Keyword(s):

Cmos Inverter ◽

Technology Node ◽

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