A low temperature Ohmic contact process for n-type Ge substrates

2013 ◽  
Author(s):  
K. Kakushima ◽  
R. Yoshihara ◽  
K. Tsutsui ◽  
H. Iwai
Keyword(s):  
Low Temperature ◽  
Ohmic Contact ◽  
Contact Process

A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs

2018 ◽  
Vol 33 (9) ◽  
pp. 095019 ◽  
Author(s):  
Yen-Ku Lin ◽  
Johan Bergsten ◽  
Hector Leong ◽  
Anna Malmros ◽  
Jr-Tai Chen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ohmic Contact ◽  
Contact Process ◽  
Low Resistance ◽  
Low Temperature Annealing ◽  
Gan Hemts

Ohmic Contact Formation on Silicon-doped Gallium Nitride Epilayers by Low Temperature Annealing

2000 ◽  
Vol 338-342 ◽  
pp. 1619-1619
Author(s):  
L.S. Tan ◽  
A. Raman ◽  
K.M. Ng ◽  
S.J. Chua ◽  
A.T.S. Wee ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Low Temperature ◽  
Ohmic Contact ◽  
Science And Technology ◽  
Contact Formation ◽  
Low Temperature Annealing ◽  
Silicon Doped ◽  
Ohmic Contact Formation ◽  
Double Publication

“removed due to double publication”. The original paper: Journal: Semiconductor Science and Technology Create an alertIssue Volume 15, Number 6 Citation: L S Tan et al 2000 Semicond. Sci. Technol. 15 585 doi: 10.1088/0268-1242/15/6/317 can be accesses at IOP: http://iopscience.iop.org/0268-1242/15/6/317

Improvement of AlGaN/GaN Heterostructure Field Effect Transistor Characteristics by Using Two-Step Ohmic Contact Process

2003 ◽  
Vol 42 (Part 1, No. 4B) ◽  
pp. 2309-2312 ◽  
Author(s):  
Dong-Hyun Cho ◽  
Mitsuaki Shimizu ◽  
Toshihide Ide ◽  
Byoungrho Shim ◽  
Hajime Okumura
Keyword(s):  
Ohmic Contact ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Contact Process ◽  
Effect Transistor ◽  
Gan Heterostructure

Low-temperature p-type ohmic contact to WSe2 using p+-MoS2/WSe2 van der Waals interface

2020 ◽  
Vol 117 (15) ◽  
pp. 153101
Author(s):  
Kei Takeyama ◽  
Rai Moriya ◽  
Kenji Watanabe ◽  
Satoru Masubuchi ◽  
Takashi Taniguchi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ohmic Contact ◽  
Van Der Waals ◽  
P Type

Low-Temperature Ohmic Contact Formation in AlN/GaN HEMT Using Microwave Annealing

2017 ◽  
Vol 64 (3) ◽  
pp. 1385-1389 ◽  
Author(s):  
Lin-Qing Zhang ◽  
Zhuo Liu ◽  
Sheng-Xun Zhao ◽  
Min-Zhi Lin ◽  
Peng-Fei Wang
Keyword(s):  
Low Temperature ◽  
Ohmic Contact ◽  
Contact Formation ◽  
Microwave Annealing ◽  
Gan Hemt ◽  
Ohmic Contact Formation

Thin Ni-Silicides for Low Resistance Contacts and Growth of Thin Crystalline Si Layers

2000 ◽  
Vol 611 ◽  
Author(s):  
Elena A. Guliants ◽  
Wayne A. Anderson
Keyword(s):  
Phase Composition ◽  
Electrical Properties ◽  
Low Temperature ◽  
Ohmic Contact ◽  
Concentration Ratio ◽  
Front Surface ◽  
Active Device ◽  
High Crystallinity ◽  
Silicide Layer ◽  
Silicide Growth

ABSTRACTA new technological method of producing the Ni silicide with metal-like conductivity by deposition of a thin Si film over an ultrathin Ni prelayer at low temperature has been developed. The interaction of a metallic Ni with the Si atoms provided by the deposition source leads to the formation of the Ni-rich silicide phases immediately after the onset of Si deposition. Continued Si deposition results in the transformation of the Ni-rich silicide phases into the more Si-rich ones which implies that the phase composition is controlled by the Ni-to-Si concentration ratio rather than temperature. After Ni is completely consumed, the Si grains grow epitaxially on the disilicide crystals. The silicide layer has been studied in detail with respect to both the dynamics of the silicide growth and the electrical properties. The Ni silicide resistivity was found to be 2×10-4Ωcm. The technique has advantages in two respects: it provides a high crystallinity Si film and allows fabrication of an ohmic contact directly on the substrate thus leaving the front surface of the film available for the formation of the active device junction.

Low-Temperature Ohmic Contact to Monolayer MoS2 by van der Waals Bonded Co/h-BN Electrodes

Nano Letters ◽  
2017 ◽  
Vol 17 (8) ◽  
pp. 4781-4786 ◽  
Author(s):  
Xu Cui ◽  
En-Min Shih ◽  
Luis A. Jauregui ◽  
Sang Hoon Chae ◽  
Young Duck Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ohmic Contact ◽  
Van Der Waals ◽  
Monolayer Mos2

A Comparative Optimization of Electrical Properties and Surface Morphology of Ti/Al/Ta/Au Ohmic Contacts in AlGaN/GaN HEMTs on Si(111), Sapphire, 4H-SiC Substrates

2012 ◽  
Vol 538-541 ◽  
pp. 2207-2210
Author(s):  
Sung Jin Cho ◽  
Cong Wang ◽  
Nam Young Kim
Keyword(s):  
Surface Morphology ◽  
Sapphire Substrate ◽  
Ohmic Contact ◽  
Annealing Time ◽  
Ohmic Contacts ◽  
Annealing Temperature ◽  
Contact Process ◽  
Annealing Temperatures ◽  
Ohmic Resistance ◽  
Gan Hemts

In the process of characterizing AlGaN/GaN HEMTs on Si (111), Sapphire, 4H-SiC substrates, various Rapid Thermal Annealing (RTA) conditions for the Ti/Al/Ta/Au ohmic contact process and the resulting surface analysis have been investigated. In order to achieve a low ohmic contact resistance (RC) and a high quality surface morphology, we tested seven steps (800 °C to 920 °C) annealing temperatures and two steps (15, 30 sec) annealing times. According to these annealing temperatures and times, the optimal ohmic resistance of 3.62 × 10-6 Ohm • cm2 on Si(111) substrate, 9.44 × 10-6 Ohm • cm2 on Sapphire substrate and 1.24 × 10-6 Ohm • cm2 on 4H-SiC substrate are obtained at an annealing temperature of 850 °C and an annealing time of 30 sec, 800 °C and an annealing time of 30 sec and 900 °C and an annealing time of 30 sec, respectively. The surface morphologies of the ohmic contact metallization at different annealing temperatures are measured using an Atomic Force Microscope (AFM). AFM morphology Root Mean Square (RMS) level determines the relationship of the annealing temperature and the annealing time for all of the samples. According to these annealing temperatures and times, the optimal ohmic surface RMS roughness of 13.4 nm on Si(111) substrate, 3.8 nm on Sapphire substrate and 2.9 nm on 4H-SiC substrate are obtained at an annealing temperature of 850 °C and an annealing time of 30 sec, 800 °C and an annealing time of 30 sec and 900 °C and an annealing time of 30 sec, respectively.

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