Engineering metal oxide semiconductor nanostructures for enhanced charge transfer: fundamentals and emerging SERS applications

Fundamentals of doping engineering strategies of metal oxide semiconductors and various charge transfer processes for emerging SERS applications are discussed.

Boosting selective H2 sensing of ZnO derived from ZIF-8 by rGO functionalization

Hydrogen (H2) sensors based on metal oxide semiconductors (MOS) have attracted great attention for safety concerns of traditional industries and energy storing devices. ZnO has been widely studied as an...

Scalable High-Speed Hybrid Complementary Integrated Circuits based on Solution-Processed Organic and Amorphous Metal Oxide Semiconductors

Solution-processed single-crystal organic semiconductors (OSCs) and amorphous metal oxide semiconductors (MOSs) are promising for high-mobility, p- and n-channel thin-film transistors (TFTs), respectively. Organic−inorganic hybrid complementary circuits hence have great potential to satisfy practical requirements; however, some chemical incompatibilities between OSCs and MOSs, such as heat and chemical resistance, conventionally make it difficult to rationally integrate TFTs based on solution-processed OSC and MOS into the same substrates. In this work, we achieved a rational integration method based on the solution-processed semiconductors by carefully managing the device configuration and the deposition and patterning techniques from materials point of view. The balanced high performances as well as the uniform fabrication of the TFTs led to densely integrated five-stage ring oscillators with the stage propagation delay of 1.3 µs, which is the fastest operation among ever reported complementary ring oscillators based on solution-processed semiconductors.