2001 IEEE International SOI Conference Proceedings (Cat No 01CH37207) SOI-01
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Layout optimization of cascode RF SOI transistors

2001 IEEE International SOI Conference Proceedings (Cat No 01CH37207) SOI-01 ◽

10.1109/soic.2001.958008 ◽

2002 ◽

Author(s):

M. Marenk ◽

E. Ristolainen

Keyword(s):

Layout Optimization

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Phenomenalistic reconsideration of Hooge parameter in buried-channel metal-oxide-semiconductor field-effect transistors

2001 IEEE International SOI Conference Proceedings (Cat No 01CH37207) SOI-01 ◽

10.1109/soic.2001.957980 ◽

2002 ◽

Author(s):

Y. Omura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Buried Channel

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Double-gate SOI MOSFETs with asymmetrical configuration

2001 IEEE International SOI Conference Proceedings (Cat No 01CH37207) SOI-01 ◽

10.1109/soic.2001.958030 ◽

2002 ◽

Cited By ~ 2

Author(s):

F. Allibert ◽

A. Zaslavsky ◽

S. Cristoloveanu

Keyword(s):

Double Gate

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A 0.5-1 V MTCMOS/SIMOX ROM macro with low-V/sub th/ memory cells

2001 IEEE International SOI Conference Proceedings (Cat No 01CH37207) SOI-01 ◽

10.1109/soic.2001.958027 ◽

2002 ◽

Author(s):

T. Douseki ◽

N. Shibata ◽

J. Yamada

Keyword(s):

Memory Cells

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Effect of implant dose and energy on formation of thin SOI structure in SIMOX using water plasma

2001 IEEE International SOI Conference Proceedings (Cat No 01CH37207) SOI-01 ◽

10.1109/soic.2001.957976 ◽

2002 ◽

Author(s):

Jing Chen ◽

Meng Chen ◽

Xiang Wang ◽

Yemin Dong ◽

Zhihong Zheng ◽

...

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Double-gate SOI MOSFET fabrication from bulk silicon wafer

2001 IEEE International SOI Conference Proceedings (Cat No 01CH37207) SOI-01 ◽

10.1109/soic.2001.958001 ◽

2002 ◽

Cited By ~ 2

Author(s):

Xinnan Lin ◽

Chuguang Feng ◽

Shengdong Zhang ◽

Wai-Hung Ho ◽

Mansun Chan

Keyword(s):

Silicon Wafer ◽

Double Gate ◽

Bulk Silicon ◽

Soi Mosfet

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Study of relevance of the SIMOX defect type on yield of radiation-tolerant device test structures

2001 IEEE International SOI Conference Proceedings (Cat No 01CH37207) SOI-01 ◽

10.1109/soic.2001.958020 ◽

2002 ◽

Author(s):

M.J. Anc ◽

L.P. Allen ◽

M.L. Alles ◽

R.P. Dolan ◽

S.T. Liu ◽

...

Keyword(s):

Defect Type ◽

Radiation Tolerant ◽

Device Test

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300 Mbps level converters for 0.5 V system LSIs using FD/PD-SOI technology

2001 IEEE International SOI Conference Proceedings (Cat No 01CH37207) SOI-01 ◽

10.1109/soic.2001.957994 ◽

2002 ◽

Cited By ~ 1

Author(s):

T. Fuse ◽

M. Tokumasu ◽

M. Ohta ◽

H. Fujii ◽

S. Kawanaka ◽

...

Keyword(s):

Soi Technology

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Characteristics of RF power amplifiers by 0.5 μm SOS CMOS process

2001 IEEE International SOI Conference Proceedings (Cat No 01CH37207) SOI-01 ◽

10.1109/soic.2001.958026 ◽

2002 ◽

Author(s):

Sang Lam ◽

Wing-Hung Ki ◽

Mansun Chan

Keyword(s):

Power Amplifiers ◽

Rf Power Amplifiers ◽

Cmos Process ◽

Rf Power

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Characterization of fully depleted SOI transistors after removal of the silicon substrate

2001 IEEE International SOI Conference Proceedings (Cat No 01CH37207) SOI-01 ◽

10.1109/soic.2001.958012 ◽

2002 ◽

Cited By ~ 3

Author(s):

J. Burns ◽

K. Warner ◽

P. Gouker

Keyword(s):

Silicon Substrate ◽

Fully Depleted

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2001 IEEE International SOI Conference Proceedings (Cat No 01CH37207) SOI-01Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Layout optimization of cascode RF SOI transistors

Phenomenalistic reconsideration of Hooge parameter in buried-channel metal-oxide-semiconductor field-effect transistors

Double-gate SOI MOSFETs with asymmetrical configuration

A 0.5-1 V MTCMOS/SIMOX ROM macro with low-V/sub th/ memory cells

Effect of implant dose and energy on formation of thin SOI structure in SIMOX using water plasma

Double-gate SOI MOSFET fabrication from bulk silicon wafer

Study of relevance of the SIMOX defect type on yield of radiation-tolerant device test structures

300 Mbps level converters for 0.5 V system LSIs using FD/PD-SOI technology

Characteristics of RF power amplifiers by 0.5 μm SOS CMOS process

Characterization of fully depleted SOI transistors after removal of the silicon substrate

2001 IEEE International SOI Conference Proceedings (Cat No 01CH37207) SOI-01
Latest Publications