2001 IEEE International SOI Conference Proceedings (Cat No 01CH37207) SOI-01
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Double-gate SOI MOSFETs with asymmetrical configuration

2001 IEEE International SOI Conference Proceedings (Cat No 01CH37207) SOI-01 ◽

10.1109/soic.2001.958030 ◽

2002 ◽

Author(s):

F. Allibert ◽

A. Zaslavsky ◽

S. Cristoloveanu

Keyword(s):

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Layout optimization of cascode RF SOI transistors

2001 IEEE International SOI Conference Proceedings (Cat No 01CH37207) SOI-01 ◽

10.1109/soic.2001.958008 ◽

2002 ◽

Author(s):

M. Marenk ◽

E. Ristolainen

Keyword(s):

Layout Optimization

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Phenomenalistic reconsideration of Hooge parameter in buried-channel metal-oxide-semiconductor field-effect transistors

2001 IEEE International SOI Conference Proceedings (Cat No 01CH37207) SOI-01 ◽

10.1109/soic.2001.957980 ◽

2002 ◽

Author(s):

Y. Omura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Effect of implant dose and energy on formation of thin SOI structure in SIMOX using water plasma

2001 IEEE International SOI Conference Proceedings (Cat No 01CH37207) SOI-01 ◽

10.1109/soic.2001.957976 ◽

2002 ◽

Author(s):

Jing Chen ◽

Meng Chen ◽

Xiang Wang ◽

Yemin Dong ◽

Zhihong Zheng ◽

...

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Double-gate SOI MOSFET fabrication from bulk silicon wafer

2001 IEEE International SOI Conference Proceedings (Cat No 01CH37207) SOI-01 ◽

10.1109/soic.2001.958001 ◽

2002 ◽

Author(s):

Xinnan Lin ◽

Chuguang Feng ◽

Shengdong Zhang ◽

Wai-Hung Ho ◽

Mansun Chan

Keyword(s):

Silicon Wafer ◽

Double Gate ◽

Bulk Silicon ◽

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Study of relevance of the SIMOX defect type on yield of radiation-tolerant device test structures

2001 IEEE International SOI Conference Proceedings (Cat No 01CH37207) SOI-01 ◽

10.1109/soic.2001.958020 ◽

2002 ◽

Author(s):

M.J. Anc ◽

L.P. Allen ◽

M.L. Alles ◽

R.P. Dolan ◽

S.T. Liu ◽

...

Keyword(s):

Defect Type ◽

Radiation Tolerant ◽

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A 0.5-1 V MTCMOS/SIMOX ROM macro with low-V/sub th/ memory cells

2001 IEEE International SOI Conference Proceedings (Cat No 01CH37207) SOI-01 ◽

10.1109/soic.2001.958027 ◽

2002 ◽

Author(s):

T. Douseki ◽

N. Shibata ◽

J. Yamada

Keyword(s):

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300 Mbps level converters for 0.5 V system LSIs using FD/PD-SOI technology

2001 IEEE International SOI Conference Proceedings (Cat No 01CH37207) SOI-01 ◽

10.1109/soic.2001.957994 ◽

2002 ◽

Author(s):

T. Fuse ◽

M. Tokumasu ◽

M. Ohta ◽

H. Fujii ◽

S. Kawanaka ◽

...

Keyword(s):

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Characteristics of RF power amplifiers by 0.5 μm SOS CMOS process

2001 IEEE International SOI Conference Proceedings (Cat No 01CH37207) SOI-01 ◽

10.1109/soic.2001.958026 ◽

2002 ◽

Author(s):

Sang Lam ◽

Wing-Hung Ki ◽

Mansun Chan

Keyword(s):

Power Amplifiers ◽

Rf Power Amplifiers ◽

Cmos Process ◽

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Characterization of fully depleted SOI transistors after removal of the silicon substrate

2001 IEEE International SOI Conference Proceedings (Cat No 01CH37207) SOI-01 ◽

10.1109/soic.2001.958012 ◽

2002 ◽

Author(s):

J. Burns ◽

K. Warner ◽

P. Gouker

Keyword(s):

Silicon Substrate ◽

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