Characterization of fully depleted SOI transistors after removal of the silicon substrate

2002 ◽  
Author(s):  
J. Burns ◽  
K. Warner ◽  
P. Gouker
Keyword(s):  
Silicon Substrate ◽  
Fully Depleted

Electrical and electro-optic characterization of nonlinear polymer thin films on silicon substrate

2014 ◽  
Author(s):  
Stefan Prorok ◽  
Marvin Schulz ◽  
Alexander Petrov ◽  
Manfred Eich ◽  
Jingdong Luo ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Substrate ◽  
Polymer Thin Films ◽  
Electro Optic

Morphological Characterization of Fabricated Aluminum Interdigitated Electrodes on Silicon Substrate

2015 ◽  
Vol 1109 ◽  
pp. 381-384
Author(s):  
M. Safwan Azmi ◽  
Sharipah Nadzirah ◽  
Uda Hashim
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Silicon Substrate ◽  
Morphological Characterization ◽  
Interdigitated Electrodes ◽  
Photolithography Process ◽  
Scanning Electron

The purpose of this paper is to study the morphological characterization of aluminum interdigitated electrodes (IDE) of different gap sizes on silicon substrate. The electrodes were fabricated using standard photolithography process and were done so with sizes of 12 μm, 10 μm and 7 μm. The electrodes were morphologically characterized using scanning electron microscope (SEM) and high-powered microscope (HPM).Keywords: morphological, interdigitated electrodes, aluminum

Optical characterization of Ba0.5Sr0.5TiO3 material grown on a p-type silicon substrate (111) doped niobium oxide and chlorophyll

2020 ◽  
Vol 568 (1) ◽  
pp. 62-70
Author(s):  
Aep Setiawan ◽  
Endah Kinarya Palupi ◽  
Rofiqul Umam ◽  
Husin Alatas ◽  
Irzaman
Keyword(s):  
Silicon Substrate ◽  
Niobium Oxide ◽  
Optical Characterization ◽  
Type Silicon ◽  
P Type

Tem Characterization of Highly Oriented Diamond Films on (001) Silicon Synthesized by Bias Enhanced Nucleation Technique

1996 ◽  
Vol 458 ◽  
Author(s):  
Seung-Joon Jeon ◽  
Arun Kumar Chawla ◽  
Young-Joon Baik ◽  
Changmo Sung
Keyword(s):  
Surface Morphology ◽  
Growth Mechanism ◽  
Silicon Substrate ◽  
Three Dimensional ◽  
Diamond Films ◽  
Nucleation And Growth ◽  
Texture Formation ◽  
Tem Characterization ◽  
Nucleation And Growth Mechanism

ABSTRACTHighly oriented diamond films were deposited on a (001) silicon substrate by bias enhanced MPCVD technique. Three-dimensional TEM characterizations were carried out to understand the nucleation and growth mechanism of diamond grains. The surface morphology, defects, and misorientations of diamond films were compared as a function of synthesizing temperatures and thickness of the films. From our experimental results the texture formation mechanism of diamond films is discussed.

Design and characterization of stop‐band filters using PZT layer on silicon substrate phononic crystals

2008 ◽  
Vol 123 (5) ◽  
pp. 3039-3039 ◽  
Author(s):  
Jérôme Vasseur ◽  
Anne‐Christine Hladky‐Hennion ◽  
Bertrand Dubus ◽  
Bahram Djafari‐Rouhani ◽  
Bruno Morvan
Keyword(s):  
Silicon Substrate ◽  
Stop Band ◽  
Phononic Crystals

Characterization of Silicon Nitride Capping Dielectrics on AlGaN/GaN/Silicon Substrate HEMT Structures with a Mercury Probe

2019 ◽  
Author(s):  
Timothy Boles ◽  
Wayne Struble ◽  
Gabriel Cueva ◽  
Robert J. Hillard ◽  
Win Ye ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Substrate
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