Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)
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Extraction and modelling of thermal behavior in trench isolated bipolar structures

Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) ◽

10.1109/bipol.1999.803535 ◽

2003 ◽

Cited By ~ 13

Author(s):

D.J. Walkey ◽

T.J. Smy ◽

D. Marchesan ◽

Hai Tran ◽

C. Reimer ◽

...

Keyword(s):

Thermal Behavior

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Merits and requirements of a few RF architectures

Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) ◽

10.1109/bipol.1999.803527 ◽

2003 ◽

Cited By ~ 8

Author(s):

P.C. Davis

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A fully integrated 3 V 2.3 GHz synchronous oscillator for WLAN applications

Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) ◽

10.1109/bipol.1999.803546 ◽

2003 ◽

Cited By ~ 2

Author(s):

F. Badets ◽

Y. Deval ◽

J.-B. Begueret ◽

A. Spataro ◽

P. Fouillat

Keyword(s):

Fully Integrated

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A 5.1-5.8 GHz low-power image-reject downconverter in SiGe technology

Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) ◽

10.1109/bipol.1999.803528 ◽

2003 ◽

Cited By ~ 7

Author(s):

J.R. Long ◽

R.A. Hadaway ◽

D.L. Harame

Keyword(s):

Low Power

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Impact-ionization induced instabilities in high-speed bipolar transistors and their influence on the maximum usable output voltage

Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) ◽

10.1109/bipol.1999.803524 ◽

2003 ◽

Cited By ~ 9

Author(s):

M. Rickelt ◽

H.-M. Rein

Keyword(s):

Output Voltage ◽

High Speed ◽

Impact Ionization ◽

Bipolar Transistors

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A Si/SiGe HBT sub-harmonic mixer/downconverter

Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) ◽

10.1109/bipol.1999.803529 ◽

2003 ◽

Cited By ~ 3

Author(s):

L. Sheng ◽

J. Jensen ◽

L. Larson

Keyword(s):

Sige Hbt ◽

Harmonic Mixer

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A monolithic SiGe power amplifier for dual-mode (CDMA/AMPS) cellular handset applications

Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) ◽

10.1109/bipol.1999.803548 ◽

2003 ◽

Cited By ~ 8

Author(s):

P.D. Tseng ◽

L.Y. Zhang ◽

G.B. Gao ◽

M.F. Chang

Keyword(s):

Power Amplifier ◽

Dual Mode

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A 0.24 μm SiGe BiCMOS mixed-signal RF production technology featuring a 47 GHz f/sub t/ HBT and 0.18 μm L/sub ett/ CMOS

Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) ◽

10.1109/bipol.1999.803539 ◽

2003 ◽

Cited By ~ 4

Author(s):

S.A. St. Onge ◽

D.L. Harame ◽

J.S. Dunn ◽

S. Subbanna ◽

D.C. Ahlgren ◽

...

Keyword(s):

Production Technology ◽

Mixed Signal ◽

Sige Bicmos

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Modeling and parameter extraction of BJT substrate resistance

Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) ◽

10.1109/bipol.1999.803536 ◽

2003 ◽

Author(s):

Tzung-Yin Lee ◽

R.M. Fox ◽

K. Green ◽

T. Vrotsos

Keyword(s):

Parameter Extraction ◽

Substrate Resistance

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A highly linear bipolar 1 V folded cascode 1.9 GHz low noise amplifier

Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) ◽

10.1109/bipol.1999.803549 ◽

2003 ◽

Cited By ~ 8

Author(s):

B. Ray ◽

T. Manku ◽

R.D. Beards ◽

J.J. Nisbet ◽

W. Kung

Keyword(s):

Low Noise ◽

Low Noise Amplifier ◽

Folded Cascode ◽

Noise Amplifier

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Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Extraction and modelling of thermal behavior in trench isolated bipolar structures

Merits and requirements of a few RF architectures

A fully integrated 3 V 2.3 GHz synchronous oscillator for WLAN applications

A 5.1-5.8 GHz low-power image-reject downconverter in SiGe technology

Impact-ionization induced instabilities in high-speed bipolar transistors and their influence on the maximum usable output voltage

A Si/SiGe HBT sub-harmonic mixer/downconverter

A monolithic SiGe power amplifier for dual-mode (CDMA/AMPS) cellular handset applications

A 0.24 μm SiGe BiCMOS mixed-signal RF production technology featuring a 47 GHz f/sub t/ HBT and 0.18 μm L/sub ett/ CMOS

Modeling and parameter extraction of BJT substrate resistance

A highly linear bipolar 1 V folded cascode 1.9 GHz low noise amplifier

Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)
Latest Publications