2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.

Novel electrical re-connection of very thin fine pitch ball grid array (VFBGA) package for advanced backside fault isolation

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. ◽

10.1109/relphy.2005.1493169 ◽

2005 ◽

Author(s):

Li Qian ◽

Yan Xu ◽

Guobin Song ◽

Xiaoyu Ji

Keyword(s):

Ball Grid Array ◽

Fault Isolation ◽

Fine Pitch

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Implication of polarity dependence degradation on NMOSFET with polysilicon/Hf-silicate gate stack

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. ◽

10.1109/relphy.2005.1493180 ◽

2005 ◽

Author(s):

R. Choi ◽

B.H. Lee ◽

C.D. Young ◽

J.H. Sim ◽

K. Mathews ◽

...

Keyword(s):

Gate Stack

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Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. ◽

10.1109/relphy.2005.1493159 ◽

2005 ◽

Author(s):

P. Samanta ◽

Tsz Yin Man ◽

A.C.K. Chan ◽

Qingchun Zhang ◽

Chunxiang Zhu ◽

...

Keyword(s):

Leakage Current ◽

Gate Oxides ◽

Direct Tunneling ◽

Stress Induced Leakage Current

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Electrical characteristics and reliability of extended drain voltage NMOS devices with multi-RESURF junction

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. ◽

10.1109/relphy.2005.1493149 ◽

2005 ◽

Cited By ~ 5

Author(s):

V.A. Vashchenko ◽

D. Brisbin ◽

P. Linclorfer ◽

P. Chaparala ◽

P. Hopper

Keyword(s):

Electrical Characteristics ◽

Drain Voltage

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Reliability considerations of strained silicon on relaxed silicon-germanium (SiGe) substrate

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. ◽

10.1109/relphy.2005.1493120 ◽

2005 ◽

Cited By ~ 6

Author(s):

J.R. Shin ◽

K. Wu

Keyword(s):

Silicon Germanium ◽

Strained Silicon

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Hot carrier effect on CMOS RF amplifiers

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. ◽

10.1109/relphy.2005.1493202 ◽

2005 ◽

Cited By ~ 4

Author(s):

Enjun Xiao

Keyword(s):

Rf Amplifiers ◽

Hot Carrier ◽

Carrier Effect ◽

Hot Carrier Effect ◽

Cmos Rf

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A novel method for accurately estimating alpha-induced soft error rates

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. ◽

10.1109/relphy.2005.1493089 ◽

2005 ◽

Cited By ~ 1

Author(s):

R. Takasu ◽

Y. Tosaka ◽

H. Fukuda ◽

Y. Karaoka

Keyword(s):

Error Rates ◽

Soft Error ◽

Novel Method

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Effect of layout orientation on the performance and reliabiltiy of high voltage N-LDMOS in standard submicron logic STI CMOS process

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. ◽

10.1109/relphy.2005.1493189 ◽

2005 ◽

Cited By ~ 2

Author(s):

Bin Wang ◽

Hoc Nguyen ◽

J. Mavoori ◽

A. Horch ◽

Yanjun Ma ◽

...

Keyword(s):

High Voltage ◽

Cmos Process

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A new neutron facility for single-event effect testing

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. ◽

10.1109/relphy.2005.1493209 ◽

2005 ◽

Author(s):

A.V. Prokofiev ◽

S. Pomp ◽

J. Blomgren ◽

O. Bystrom ◽

C. Ekstrom ◽

...

Keyword(s):

Single Event ◽

Single Event Effect ◽

Neutron Facility

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Influence of process parameters and bump geometry on the residual stress distribution in a chip-on-foil bonding process

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. ◽

10.1109/relphy.2005.1493138 ◽

2005 ◽

Cited By ~ 1

Author(s):

P. Suter ◽

R. Bauknecht ◽

T. Graf ◽

H. Duran ◽

I. Venter

Keyword(s):

Residual Stress ◽

Stress Distribution ◽

Process Parameters ◽

Residual Stress Distribution ◽

Bonding Process ◽

Influence Of Process Parameters

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2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Novel electrical re-connection of very thin fine pitch ball grid array (VFBGA) package for advanced backside fault isolation

Implication of polarity dependence degradation on NMOSFET with polysilicon/Hf-silicate gate stack

Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides

Electrical characteristics and reliability of extended drain voltage NMOS devices with multi-RESURF junction

Reliability considerations of strained silicon on relaxed silicon-germanium (SiGe) substrate

Hot carrier effect on CMOS RF amplifiers

A novel method for accurately estimating alpha-induced soft error rates

Effect of layout orientation on the performance and reliabiltiy of high voltage N-LDMOS in standard submicron logic STI CMOS process

A new neutron facility for single-event effect testing

Influence of process parameters and bump geometry on the residual stress distribution in a chip-on-foil bonding process

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2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Novel electrical re-connection of very thin fine pitch ball grid array (VFBGA) package for advanced backside fault isolation

Implication of polarity dependence degradation on NMOSFET with polysilicon/Hf-silicate gate stack

Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides

Electrical characteristics and reliability of extended drain voltage NMOS devices with multi-RESURF junction

Reliability considerations of strained silicon on relaxed silicon-germanium (SiGe) substrate

Hot carrier effect on CMOS RF amplifiers

A novel method for accurately estimating alpha-induced soft error rates

Effect of layout orientation on the performance and reliabiltiy of high voltage N-LDMOS in standard submicron logic STI CMOS process

A new neutron facility for single-event effect testing

Influence of process parameters and bump geometry on the residual stress distribution in a chip-on-foil bonding process

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.
Latest Publications