Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides

2005 ◽  
Author(s):  
P. Samanta ◽  
Tsz Yin Man ◽  
A.C.K. Chan ◽  
Qingchun Zhang ◽  
Chunxiang Zhu ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Oxides ◽  
Direct Tunneling ◽  
Stress Induced Leakage Current

Stress induced leakage current in ultra-thin gate oxides after constant current stress

1997 ◽  
Vol 36 (1-4) ◽  
pp. 145-148 ◽  
Author(s):  
A. Scarpa ◽  
G. Ghibaudo ◽  
G. Ghidini ◽  
G. Pananakakis ◽  
A. Paccagnella
Keyword(s):  
Leakage Current ◽  
Constant Current ◽  
Gate Oxides ◽  
Current Stress ◽  
Stress Induced Leakage Current

A model of the stress induced leakage current in gate oxides

2001 ◽  
Vol 48 (2) ◽  
pp. 285-288 ◽  
Author(s):  
L. Larcher ◽  
A. Paccagnella ◽  
G. Ghidini
Keyword(s):  
Leakage Current ◽  
Gate Oxides ◽  
Stress Induced Leakage Current

Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides

1998 ◽  
Vol 45 (6) ◽  
pp. 2375-2382 ◽  
Author(s):  
M. Ceschia ◽  
A. Paccagnella ◽  
A. Cester ◽  
A. Scarpa ◽  
G. Ghidini
Keyword(s):  
Leakage Current ◽  
Gate Oxides ◽  
Radiation Induced ◽  
Stress Induced Leakage Current

Direct tunneling stress-induced leakage current in ultrathin HfO2∕SiO2 gate dielectric stacks

2006 ◽  
Vol 100 (9) ◽  
pp. 094507 ◽  
Author(s):  
Piyas Samanta ◽  
Tsz Yin Man ◽  
Qingchun Zhang ◽  
Chunxiang Zhu ◽  
Mansun Chan
Keyword(s):  
Leakage Current ◽  
Gate Dielectric ◽  
Direct Tunneling ◽  
Stress Induced Leakage Current
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