Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications
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Hot Carrier Reliability Considerations For High Performance Submicron Mosfet's

Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.1997.614921 ◽

2005 ◽

Author(s):

Honda Huang ◽

Jiuun-Jer Yang ◽

Ta-Lee Yu ◽

Konrad Young ◽

Kuang-Yi Chiu

Keyword(s):

High Performance ◽

Hot Carrier

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A Hardware-efficient Architecture For 3-D Graphics Processor

Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.1997.614735 ◽

2005 ◽

Author(s):

B.-S. Liang ◽

Y.-C. Nieh ◽

Y.-P. Niou ◽

C.-W. Jen ◽

G. Chuang

Keyword(s):

Graphics Processor

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Challenge To The 300mm Technology

Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.1997.614717 ◽

2005 ◽

Author(s):

H. Komiya

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Electrical Characteristics Of Ti-salicided N-mosfets With Asymmetric Source/drain Regions

Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.1997.614721 ◽

2005 ◽

Author(s):

Jaesung Lee ◽

Kwangsoo Kim ◽

Jinsu Han ◽

Jaegab Kim ◽

Hunsub Park

Keyword(s):

Electrical Characteristics

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A 550 Mhz Alpha Microprocessor Targeted At PC Applications

Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.1997.614758 ◽

2005 ◽

Author(s):

S. Kobayashi ◽

Y. Saito ◽

F. Terayama ◽

T. Ueda ◽

K. Higashitani ◽

...

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Status And Trends In SOI CMOS Technology

Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.1997.614741 ◽

2005 ◽

Author(s):

J.-P. Colinge

Keyword(s):

Cmos Technology ◽

Status And Trends ◽

Soi Cmos

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Design Issues For Low Power Mobile Transceiver Frontends

Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.1997.614716 ◽

2005 ◽

Author(s):

P. Baltus

Keyword(s):

Low Power ◽

Design Issues

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A Low-power Low-voltage Direct Digital Frequency Synthesizer

Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.1997.614772 ◽

2005 ◽

Cited By ~ 20

Author(s):

Shyuan Liao ◽

Liang-Gee Chen

Keyword(s):

Low Power ◽

Frequency Synthesizer ◽

Low Voltage ◽

Digital Frequency ◽

Direct Digital Frequency Synthesizer

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A Complete Asymmetric Drain Current Model For Post-stress Submicron pMOSFET's

Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.1997.614769 ◽

2005 ◽

Cited By ~ 1

Author(s):

Young-Shying Chen ◽

Sheng-Lyang Jang

Keyword(s):

Current Model ◽

Drain Current ◽

Post Stress

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Impact Of Boron Penetration On Gate Oxide Reliability And Device Lifetime In P+-poly PMOSFETs

Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.1997.614754 ◽

2005 ◽

Cited By ~ 3

Author(s):

B.Y. Kim ◽

I.M. Liu ◽

B.W. Min ◽

H.F. Luan ◽

M. Gardner ◽

...

Keyword(s):

Gate Oxide ◽

Oxide Reliability ◽

Device Lifetime ◽

Boron Penetration

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Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and ApplicationsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Hot Carrier Reliability Considerations For High Performance Submicron Mosfet's

A Hardware-efficient Architecture For 3-D Graphics Processor

Challenge To The 300mm Technology

Electrical Characteristics Of Ti-salicided N-mosfets With Asymmetric Source/drain Regions

A 550 Mhz Alpha Microprocessor Targeted At PC Applications

Status And Trends In SOI CMOS Technology

Design Issues For Low Power Mobile Transceiver Frontends

A Low-power Low-voltage Direct Digital Frequency Synthesizer

A Complete Asymmetric Drain Current Model For Post-stress Submicron pMOSFET's

Impact Of Boron Penetration On Gate Oxide Reliability And Device Lifetime In P+-poly PMOSFETs

Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications
Latest Publications