IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits
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Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

MEMS failure analysis and reliability

IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2003.1222713 ◽

2004 ◽

Cited By ~ 4

Author(s):

V. Samper ◽

A. Trigg

Keyword(s):

Failure Analysis

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Gate dielectric breakdown induced microstructural damages in MOSFETs

IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2003.1222753 ◽

2004 ◽

Cited By ~ 4

Author(s):

L.J. Tang ◽

K.L. Pey ◽

C.H. Tung ◽

M.K. Radhakrishnan ◽

W.H. Lin

Keyword(s):

Gate Dielectric ◽

Dielectric Breakdown

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Neutron induced oxide degradation in MOSFET structures

IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2003.1222756 ◽

2004 ◽

Author(s):

D.K. Sharma ◽

A.N. Chandorkar ◽

S.J. Vaidya

Keyword(s):

Oxide Degradation

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Physical Failure Analysis techniques for Cu/low k technology

IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2003.1222763 ◽

2004 ◽

Author(s):

Huixian Wu ◽

B. Hooghan ◽

J. Cargo

Keyword(s):

Failure Analysis ◽

Analysis Techniques ◽

Low K

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Application of energy-filtering TEM in contrast enhancement and elemental identification in IC failure analysis

IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2003.1222766 ◽

2004 ◽

Cited By ~ 1

Author(s):

W. Zhang ◽

S. Ng ◽

D. Cheong ◽

S. Lim

Keyword(s):

Failure Analysis ◽

Contrast Enhancement ◽

Energy Filtering

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Progressive breakdown statistics in ultra-thin silicon dioxides

IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2003.1222757 ◽

2004 ◽

Author(s):

W.Y. Loh ◽

B.J. Cho ◽

M.F. Li ◽

D.S.H. Chan ◽

C.H. Ang ◽

...

Keyword(s):

Thin Silicon

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Electromigration reliability of Cu interconnects and the impact of low-k dielectrics

IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2003.1222739 ◽

2004 ◽

Cited By ~ 1

Author(s):

P.S. Ho ◽

K.-D. Lee ◽

E.T. Ogawa ◽

X. Lu ◽

H. Matsuhashi

Keyword(s):

Cu Interconnects ◽

The Impact ◽

Low K

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Reliability oriented process and device simulations of power VDMOS transistors in Bipolar/CMOS/DMOS technology

IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2003.1222733 ◽

2004 ◽

Cited By ~ 4

Author(s):

Y. Rey-Tauriac ◽

M. Taurin ◽

H. Lhermite ◽

O. Bonnaud

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130 nm process technology integration of advanced Cu/CVD low k dielectric material-case study of failure analysis and yield enhancement

IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2003.1222740 ◽

2004 ◽

Cited By ~ 1

Author(s):

C.F. Tsang ◽

Y.J. Su ◽

V.N. Bliznetsov ◽

G.T. Ang

Keyword(s):

Technology Integration ◽

Failure Analysis ◽

Dielectric Material ◽

Yield Enhancement ◽

Process Technology ◽

Low K

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Electrical characterization of SiO/sub x/N/sub y//Ta/sub 2/O/sub 5/ stacked gate oxides on strained-Si

IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2003.1222755 ◽

2004 ◽

Author(s):

C.K. Maiti ◽

S.K. Samanta ◽

G.K. Dalapati ◽

S. Chatterjee

Keyword(s):

Electrical Characterization ◽

Strained Si ◽

Gate Oxides

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IEEE International Symposium on the Physical and Failure Analysis of Integrated CircuitsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

MEMS failure analysis and reliability

Gate dielectric breakdown induced microstructural damages in MOSFETs

Neutron induced oxide degradation in MOSFET structures

Physical Failure Analysis techniques for Cu/low k technology

Application of energy-filtering TEM in contrast enhancement and elemental identification in IC failure analysis

Progressive breakdown statistics in ultra-thin silicon dioxides

Electromigration reliability of Cu interconnects and the impact of low-k dielectrics

Reliability oriented process and device simulations of power VDMOS transistors in Bipolar/CMOS/DMOS technology

130 nm process technology integration of advanced Cu/CVD low k dielectric material-case study of failure analysis and yield enhancement

Electrical characterization of SiO/sub x/N/sub y//Ta/sub 2/O/sub 5/ stacked gate oxides on strained-Si

IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits
Latest Publications