Step-graded AlGaN vs superlattice: Role of strain relief layer in dynamic on-resistance degradation

In this work, we study the impacts of different types of strain relief layer (SRL) on dynamic on-resistance (Ron) degradation of GaN power devices on Si by back-gate ramping and vertical leakage measurement. Our study reveals that the SRL has important effects on the dynamic Ron. Compared with step-graded AlGaN SRL, the superlattice SRL possesses much more energy barriers, which can more effectively block the leakage of holes from GaN buffer and the injection of electrons from Si substrate. Enhancing the carrier blocking ability of SRL could contribute to the suppression of dynamic Ron degradation.

Bridge Resistance Updating Based on the General Particle Simulation Algorithms of Complex Bayesian Formulas

The existing bridges are subjected to time-variant loading and resistance degradation processes. How to update resistance probability distribution functions with resistance degradation model and proof load effects has become one of the research hotspots in bridge engineering field. To solve with the above issue, this paper proposed the general particle simulation algorithms of complex Bayesian formulas for bridge resistance updating. Firstly, the complex Bayesian formulas for updating resistance probability model are built. For overcoming the difficulty for the analytic calculation of complex Bayesian formulas, the general particle simulation methods are provided to obtain the particles of complex Bayesian formulas; then, with the improved expectation maximization optimization algorithm obtained with the combination of K-MEANS algorithm and Expectation Maximization (EM) algorithm, the above simulated particles can be used to estimate the posteriori probability density functions of resistance probability model; finally, a numerical example is provided to illustrate the feasibility and application of the proposed algorithms.

Mechanism Analysis of Dynamic On-State Resistance Degradation for a Commercial GaN HEMT Using Double Pulse Test

The dynamic on-resistance (RON) behavior of one commercial GaN HEMT device with p-GaN gate is investigated under hard-switching conditions. The non-monotonic performance of dynamic RON with off-state voltage ranging from 50 to 400 V is ascribed to the “leaky dielectric” model. The highest normalized RON value of 1.22 appears at 150 and 200 V. The gradual increase and following maximum of dynamic RON are found when the device is exposed to a stress voltage for an extended stress time under 100 and 200 V, which is due to a much longer trapping time compared to detrapping time related to deep acceptors and donors. No obvious RON degradation, thanks to the suppressed trapping effect, is observed at higher VDS. From the multi-pulse test, the dynamic RON is seen to be insensitive to the frequency. It is demonstrated that the leakage, especially under source and drain contact, is a key issue in the dynamic resistance degradation.

Time-dependent reliability of (weighted) k-out-of-n systems with identical component deterioration

The performance of civil infrastructure systems is vital in supporting a community’s functionalities. Reliability assessment of these systems is a powerful approach to evaluate whether the system performance is desirably safe under the impacts of resistance degradation and non-stationary loads. A k-out-of-n system is a widely-used logic model for a system with n components, which survives (works) if at least k components work. Its special cases include a series or a parallel system. Furthermore, a weighted k-out-of-n system has components with positive integer weights and the system survives if the total weight of working components reaches the predefined threshold k. This paper proposes a method for estimating the time-dependent reliability of both ordinary and weighted k-out-of-n systems, taking into account the effects of resistance deterioration, resistance correlation and load non-stationarity, for which a mathematical solution is derived. The applicability of the proposed method is illustrated through reliability evaluation of a representative k-out-of-n system.