Complete In Situ Laser Monitoring of HgCdTe/CdTe/ZnTe Growth onto GaAs Substrates

ABSTRACTThe application of relatively low resolution x-ray topography methods, typically ∿ 1 micrometer, is limited in studies which involve large scale dislocation networks. However, the ability to non-destructively image wide areas for “thick” specimens at high intensity with a tunable x-ray source makes the synchrotron an ideal probe for a range of problems previously inaccessible by other methods. Some examples will be discussed such as: (a) crack initiation and propagation in fatigued bicrystals, (b) real-time in situ plastic deformation studies in strain-annealed Mo crystals, and (c) strain distributions in vapor deposited and LPE thin films on Si and GaAs substrates.

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Vapour phase in-situ etch of (100) GaAs substrates

Materials Chemistry and Physics ◽

10.1016/0254-0584(82)90014-1 ◽

1983 ◽

Vol 9 (1-3) ◽

pp. 139-146 ◽

Cited By ~ 3

Author(s):

C. Pelosi ◽

G. Attolini ◽

G. Salviati

Keyword(s):

Vapour Phase ◽

Gaas Substrates

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Fabrication of quantum wires on GaAs substrates patterned by in situ electron-beam lithography

Solid-State Electronics ◽

10.1016/0038-1101(95)00376-2 ◽

1996 ◽

Vol 40 (1-8) ◽

pp. 627-631 ◽

Cited By ~ 4

Author(s):

M López ◽

N Tanaka ◽

I Matsuyama ◽

T Ishikawa

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Quantum Wires ◽

Gaas Substrates

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In-situ laser monitoring of ammonia concentration in dairy feedlot

Materials, Manufacturing Technology, Electronics and Information Science ◽

10.1142/9789813109384_0031 ◽

2016 ◽

Author(s):

Ying He ◽

Yu-Jun Zhang ◽

Kun You ◽

Yan-Wei Gao ◽

Chen Chen ◽

...

Keyword(s):

Ammonia Concentration ◽

Laser Monitoring

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MBE FABRICATION OF GaAs/AlGaAs LOW-DIMENSIONAL STRUCTURES ON IN SITU PATTERNED GaAs SUBSTRATES

International Journal of Modern Physics B ◽

10.1142/s0217979296001975 ◽

1996 ◽

Vol 10 (27) ◽

pp. 3637-3648

Author(s):

TOMONORI ISHIKAWA ◽

MÁXIMO LÓPEZ

Keyword(s):

High Vacuum ◽

Processing Technique ◽

Ultra High Vacuum ◽

Surface Oxide Layer ◽

Gaas Substrates ◽

Mask Material ◽

Gaas Buffer Layer ◽

Novel Processing ◽

Low Dimensional

We have developed a novel processing technique, conducted entirely under an ultra-high vacuum environment, to pattern GaAs substrates on which GaAs/AlGaAs low-dimensional structures are subsequently regrown. In this technique, called in situ electron-beam (EB) lithography, a thin surface-oxide-layer is selectively formed by EB-stimulated oxidation under a controlled oxygen atmosphere. This is used as a mask material to define patterned mesas by Cl 2 gas etching. Subsequently, the initial mesa size is reduced by the regrowth of a GaAs buffer layer; finally, low-dimensional structures, such as quantum-wire or -box structures, are formed on the top of the mesas by the growth of a quantum well. This in situ technique is advantageous for the fabrication of arbitrarily designed low-dimensional structures with high quality.

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Effects of the Selenium Precursor on the Growth of ZnSe by Metalorganic Chemical Vapor Deposition

MRS Proceedings ◽

10.1557/proc-131-63 ◽

1988 ◽

Vol 131 ◽

Cited By ~ 1

Author(s):

Konstantinos P. Giapis ◽

Lu Da-Cheng ◽

Klavs F. Jensen

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

High Mobility ◽

Chemical Vapor ◽

Gaas Substrates ◽

Downflow Reactor ◽

Very High ◽

Metalorganic Chemical

ABSTRACTThe growth of ZnSe on GaAs substrates by metalorganic chemical vapor deposition was investigated in a specially designed vertical downflow reactor. Dimethylzinc was used as the Zn source while different Se source compounds (hydrogen selenide (H2Se), diethylselenide and methylallylselenide) were employed to determine the effect of different source combinations on morphology, thickness uniformity, growth rate, electrical properties and photoluminescence (PL) characteristics of the grown ZnSe films. The H2Se was produced in situ by reaction of H2 and Se followed by distillation to control the amount of H2Se entering the reaction zone. H2Se produced very high mobility films with good PL spectra but poor surface morphology. Diethylselenide led to layers of good morphology and PL characteristics but the films were highly resistive. Unusual surface features were observed for methylallylselenide.

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