Selective and Non-Planar Epitaxy of lnP, GalnAs and GalnAsP Using Low Pressure MOCVD

2005 ◽  
Author(s):  
E.J. Thrush ◽  
M.A. Gibbon ◽  
J.P. Stags ◽  
C.G. Cureton ◽  
C.J. Jones ◽  
...  
Keyword(s):  
Low Pressure ◽  
Low Pressure Mocvd

Low Pressure MOCVD Growth and Characterization of GaAs and InP on Silicon Substrates

1988 ◽  
Vol 126 ◽  
Author(s):  
M. Razeghi ◽  
M. Defour ◽  
F. Omnes ◽  
J. Nagle ◽  
P. Maurel ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Low Pressure ◽  
Buffer Layers ◽  
Silicon Substrates ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
High Quality ◽  
Mocvd Growth ◽  
Vapor Deposition Technique ◽  
Low Pressure Mocvd

ABSTRACTHigh quality GaAs and InP have been grown on silicon substrates, using low pressure metalorganic chemical vapor deposition technique. The growth temperature is 550°C and the growth rate 100 A/min.Photoluminescence, X-ray diffraction and electrochemical profiling verified the high quality of these layers. The use of superlattices as buffer layers, (GaAs/GaInP) in the case of GaAs/Si and (GaInAsP/InP) in the case of InP/Si, decreased the amount of misfit dislocations in the epitaxial layer. Carrier concentrations as low as 5.1015 cm−3 have been measured by electrochemical profiling.

Effects of ZnO buffer layer thickness on properties of ZnO thin films deposited by low-pressure MOCVD

2004 ◽  
Vol 262 (1-4) ◽  
pp. 456-460 ◽  
Author(s):  
Yuantao Zhang ◽  
Guotong Du ◽  
Boyang Liu ◽  
HuiChao Zhu ◽  
Tianpeng Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Low Pressure ◽  
Zno Thin Films ◽  
Low Pressure Mocvd ◽  
Buffer Layer Thickness ◽  
Zno Buffer Layer

Homoepitaxial growth of InGaN/GaN double-heterostructure light-emitting diode by low-pressure MOCVD

1998 ◽  
Author(s):  
Yoon-Ho Choi ◽  
Sung-Woo Kim ◽  
Jae H. Yi ◽  
Tae-Kyung Yoo ◽  
Chang-Hee Hong ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Low Pressure ◽  
Light Emitting ◽  
Double Heterostructure ◽  
Homoepitaxial Growth ◽  
Low Pressure Mocvd
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