2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)
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9781479952618, 9781479952601

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Heterogeneous integration by wafer-to-wafer transfer technology

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) ◽

10.1109/ltb-3d.2014.6886172 ◽

2014 ◽

Cited By ~ 4

Author(s):

Shuji Tanaka

Keyword(s):

Heterogeneous Integration

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2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) ◽

10.1109/ltb-3d.2014.6886140 ◽

2014 ◽

Cited By ~ 1

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Room temperature direct bonding of Si wafers smoothed by Ne beam irradiation

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) ◽

10.1109/ltb-3d.2014.6886163 ◽

2014 ◽

Cited By ~ 1

Author(s):

Y. Kurashima ◽

A. Maeda ◽

H. Takagi

Keyword(s):

Room Temperature ◽

Beam Irradiation

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Room-temperature wafer bonding with smooth Au thin film in ambient air using Ar RF plasma activation

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) ◽

10.1109/ltb-3d.2014.6886165 ◽

2014 ◽

Cited By ~ 5

Author(s):

Ken Okumura ◽

Eiji Higurashi ◽

Tadatomo Suga ◽

Kei Hagiwara

Keyword(s):

Thin Film ◽

Wafer Bonding ◽

Room Temperature ◽

Ambient Air ◽

Rf Plasma ◽

Plasma Activation ◽

Au Thin Film

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SiC wafer bonding by modified suface activated bonding method

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) ◽

10.1109/ltb-3d.2014.6886194 ◽

2014 ◽

Cited By ~ 1

Author(s):

Fengwen Mu ◽

Tadatomo Suga ◽

Masahisa Fujino ◽

Yoshikazu Takahashi ◽

Haruo Nakazawa ◽

...

Keyword(s):

Wafer Bonding ◽

Bonding Method ◽

Sic Wafer

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Investigation of high temperature process for III-V/SOI hybrid photonic devices with AlInAs oxidation current confinement layer

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) ◽

10.1109/ltb-3d.2014.6886156 ◽

2014 ◽

Author(s):

Yusuke Hayashi ◽

Junich Suzuki ◽

Yuki Kuno ◽

Joonhyun Kang ◽

Tomohiro Amemiya ◽

...

Keyword(s):

High Temperature ◽

Photonic Devices ◽

Oxidation Current ◽

High Temperature Process ◽

Current Confinement

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[Title page]

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) ◽

10.1109/ltb-3d.2014.6886135 ◽

2014 ◽

Keyword(s):

Title Page

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The effect of Cu particle additions on the microstructure and melting point of Sn-Bi solder for die attachment

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) ◽

10.1109/ltb-3d.2014.6886182 ◽

2014 ◽

Author(s):

O. Mokhtari ◽

H. Nishikawa

Keyword(s):

Melting Point ◽

Die Attachment

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Nanoporous gold as a versatile bonding intermediate

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) ◽

10.1109/ltb-3d.2014.6886185 ◽

2014 ◽

Author(s):

Y. -C. Lin ◽

W. -S. Wang ◽

T. Gessner ◽

M. Esashi

Keyword(s):

Nanoporous Gold

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InAs/GaAs quantum dot lasers metal-stripe-bonded onto SOI substrate

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) ◽

10.1109/ltb-3d.2014.6886157 ◽

2014 ◽

Cited By ~ 1

Author(s):

Yuan-Hsuan Jhang ◽

Katsuaki Tanabe ◽

Satoshi Iwamoto ◽

Yasuhiko Arakawa

Keyword(s):

Quantum Dot ◽

Quantum Dot Lasers ◽

Gaas Quantum Dot

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2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Heterogeneous integration by wafer-to-wafer transfer technology

Contents

Room temperature direct bonding of Si wafers smoothed by Ne beam irradiation

Room-temperature wafer bonding with smooth Au thin film in ambient air using Ar RF plasma activation

SiC wafer bonding by modified suface activated bonding method

Investigation of high temperature process for III-V/SOI hybrid photonic devices with AlInAs oxidation current confinement layer

[Title page]

The effect of Cu particle additions on the microstructure and melting point of Sn-Bi solder for die attachment

Nanoporous gold as a versatile bonding intermediate

InAs/GaAs quantum dot lasers metal-stripe-bonded onto SOI substrate

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2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Heterogeneous integration by wafer-to-wafer transfer technology

Contents

Room temperature direct bonding of Si wafers smoothed by Ne beam irradiation

Room-temperature wafer bonding with smooth Au thin film in ambient air using Ar RF plasma activation

SiC wafer bonding by modified suface activated bonding method

Investigation of high temperature process for III-V/SOI hybrid photonic devices with AlInAs oxidation current confinement layer

[Title page]

The effect of Cu particle additions on the microstructure and melting point of Sn-Bi solder for die attachment

Nanoporous gold as a versatile bonding intermediate

InAs/GaAs quantum dot lasers metal-stripe-bonded onto SOI substrate

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)
Latest Publications