Effect of the Grain Boundaries in Small Grain Polysilicon Thin Film Transistors

1989 ◽  
pp. 366-369
Author(s):  
A. Sakri ◽  
A. Le Glaunec ◽  
Y. Colin ◽  
O. Bonnaud
Keyword(s):  
Thin Film ◽  
Grain Boundaries ◽  
Thin Film Transistors

The Importance of Grain Boundaries for the Time-Dependent Mobility Degradation in Organic Thin-Film Transistors

2009 ◽  
Vol 21 (20) ◽  
pp. 4949-4954 ◽  
Author(s):  
R. T. Weitz ◽  
K. Amsharov ◽  
U. Zschieschang ◽  
M. Burghard ◽  
M. Jansen ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Boundaries ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Time Dependent ◽  
Organic Thin Film ◽  
Mobility Degradation

Charge Transport in Pentacene Thin Film Transistors

2001 ◽  
Vol 665 ◽  
Author(s):  
J. H. Schön ◽  
L. D. Buchholz ◽  
Ch. Kloc ◽  
B. Batlogg
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Single Crystal ◽  
Charge Transport ◽  
Grain Boundaries ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Nanocrystalline Material ◽  
Hole Mobility ◽  
Grain Sizes

ABSTRACTThe charge transport properties in polycrystalline pentacene thin film transistors is investigated. A potential barrier is formed at grain boundaries due charged trapping states. The influence of such grain boundaries on the hole mobility of the devices is analyzed for different grain sizes, trap concentrations, and carrier densities. The results reveal that room temperature mobilities exceeding 0.5 cm2/Vs can be obtained in thin films with large grains as well as in nanocrystalline material. Consequently, single crystal device limits can be reached also by polycrystalline pentacene thin film transistors.

Degradation in Low-Temperature Poly-Si Thin Film Transistors Depending on Grain Boundaries

2005 ◽  
Vol 44 (5A) ◽  
pp. 2895-2901 ◽  
Author(s):  
Yukiharu Uraoka ◽  
Koji Kitajima ◽  
Hiroshi Kirimura ◽  
Hiroshi Yano ◽  
Tomoaki Hatayama ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Grain Boundaries ◽  
Thin Film Transistors ◽  
Si Thin Film
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