Heavy-Ion Backscattering Spectrometry

2012 ◽  
Author(s):  
James C. Banks ◽  
James A. Knapp
Keyword(s):  
Heavy Ion ◽  
Ion Backscattering

Calibration of reference materials for total-reflection X-ray fluorescence analysis by heavy ion backscattering spectrometry

1997 ◽  
Vol 52 (7) ◽  
pp. 881-886 ◽  
Author(s):  
D Werho ◽  
R Gregory ◽  
S Schauer ◽  
X Liu ◽  
G Carney ◽  
...  
Keyword(s):  
Reference Materials ◽  
Fluorescence Analysis ◽  
Heavy Ion ◽  
Total Reflection ◽  
X Ray ◽  
Ion Backscattering

Surface erosion induced by heavy ion backscattering analysis

2011 ◽  
Vol 269 (24) ◽  
pp. 3057-3059
Author(s):  
M. Döbeli ◽  
M. Mallepell ◽  
A.M. Müller
Keyword(s):  
Heavy Ion ◽  
Surface Erosion ◽  
Ion Backscattering ◽  
Backscattering Analysis

Heavy ion backscattering spectrometry at the University of Central Florida

2004 ◽  
Vol 219-220 ◽  
pp. 358-363 ◽  
Author(s):  
G. Braunstein ◽  
M. Duffy ◽  
S. Maina ◽  
B. Tonner ◽  
J.C. Banks
Keyword(s):  
Heavy Ion ◽  
University Of Central Florida ◽  
Central Florida ◽  
The University ◽  
Ion Backscattering

scholarly journals Using heavy ion backscattering spectrometry (HIBS) to solve integrated circuit manufacturing problems

1998 ◽  
Vol 136-138 ◽  
pp. 1223-1228 ◽  
Author(s):  
J.C. Banks ◽  
B.L. Doyle ◽  
J.A. Knapp ◽  
D. Werho ◽  
R.B. Gregory ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Heavy Ion ◽  
Integrated Circuit Manufacturing ◽  
Ion Backscattering ◽  
Manufacturing Problems

scholarly journals Trace Contamination Measurements Using Heavy Ion Backscattering Spectrometry

1994 ◽  
Vol 354 ◽  
Author(s):  
J.A. Knapp ◽  
J.C. Banks ◽  
D.K. Brice
Keyword(s):  
Heavy Ions ◽  
Solid Angle ◽  
Ion Beam ◽  
Heavy Ion ◽  
Low Energy ◽  
Measuring Surface ◽  
Thin Carbon ◽  
Materials Research ◽  
Low Levels ◽  
Ion Backscattering

AbstractHeavy Ion Backscattering Spectrometry (HIBS) is a tool for measuring surface contamination at levels much lower than previously achievable with ion beam analyses. Many areas of materials research and development require very low levels of impurities, with advanced microelectronics as the best example. HIBS uses low-energy, heavy ions for analysis, taking advantage of the increased backscattering yield which can be obtained from high Z ion beams at low energy. Background due to increased yield from the substrate is eliminated by a thin carbon foil as part of the detector, with a thickness chosen to range out ions scattered from the substrate and allow only ions scattered from impurities heavier than the substrate to reach the detector. Our research system, using 150-200 keV N+ beams and a single time-of-flight detector optimized for large solid angle, has achieved a sensitivity ranging from ∼5×1010 atoms/cm2 for Fe to ∼1×109 atoms/cm for Au on Si, without preconcentration. A stand-alone HIBS prototype which we have developed for SEMATECH is expected to reach detection limits of -5×10 atoms/cm for Fe and -1×10 atoms/cm for Au on Si. In this paper we discuss in detail the factors which affect sensitivity for HIBS.

scholarly journals Time-of-flight detector for heavy ion backscattering spectrometry

1994 ◽  
Author(s):  
J.A. Knapp ◽  
J.C. Banks ◽  
B.L. Doyle
Keyword(s):  
Time Of Flight ◽  
Heavy Ion ◽  
Ion Backscattering

scholarly journals HEAVY-ION BACKSCATTERING——A NEW METHOD FOR DETERMINATION OF TRACE HEAVY ELEMENTS ON THE SURFACE AND NEAR SURFACE

1991 ◽  
Vol 40 (4) ◽  
pp. 522
Author(s):  
CHENG HUAN-SHENG ◽  
YANG FU-JIA ◽  
LI XIANG-YANG
Keyword(s):  
Heavy Ion ◽  
New Method ◽  
Heavy Elements ◽  
Near Surface ◽  
Ion Backscattering
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