An Engineering Analysis for CMC Material Design Considerations Using Carborundum's Sintered SiC Fiber and Slurry Cast/Melt Infiltration Process

2008 ◽  
pp. 63-72 ◽  
Author(s):  
G. V. Srinivasan ◽  
V. Venkateswaran ◽  
S. K. Lau
Keyword(s):  
Material Design ◽  
Engineering Analysis ◽  
Infiltration Process ◽  
Design Considerations ◽  
Sic Fiber ◽  
Melt Infiltration

Fabrication of biphasic calcium phosphates/polycaprolactone composites by melt infiltration process

2007 ◽  
Vol 19 (5) ◽  
pp. 2223-2229 ◽  
Author(s):  
Byong-Taek Lee ◽  
Do Van Quang ◽  
Min-Ho Youn ◽  
Ho-Yeon Song
Keyword(s):  
Calcium Phosphates ◽  
Infiltration Process ◽  
Melt Infiltration

Pressureless Melt Infiltrated Non-Oxide Ceramic-Metal Composites

2008 ◽  
Vol 403 ◽  
pp. 251-252
Author(s):  
A. Kalemtas ◽  
Gürsoy Arslan ◽  
Ferhat Kara
Keyword(s):  
Oxide Ceramic ◽  
Light Weight ◽  
X Ray Diffraction ◽  
Infiltration Process ◽  
Metal Composites ◽  
X Ray ◽  
Melt Infiltration ◽  
In Situ Reactions ◽  
B4c Powder

In the present study highly dense (open porosity < 1 %), light-weight (d £ 2.85 g/cm3) and Al4C3-free non-oxide ceramic-metal composites were produced at comparatively low temperatures ( 1250°C) by pressurless melt infiltration. Phase analysis of the SiC-B4C-Al composites revealed that a significant amount of hygroscopic Al4SiC4 and Al4C3 phases were formed. Si3N4 powder was added in different amounts to the SiC-B4C powder batches to suppress formation of these phases via in-situ reactions during the infiltration process. X-ray diffraction results of the SiC-B4C-Si3N4-Al composites confirmed that the incorporation of Si3N4 to the SiC-B4C system reduced or eliminated the formation of the hygroscopic phases and resulted in in-situ formation of AlN, SiC and Si phases in the composite.

Formation mechanism of Y2BaCuO5 pattern in growing YBa2Cu3Oxgrains during melt-infiltration process

1998 ◽  
Vol 13 (3) ◽  
pp. 583-588 ◽  
Author(s):  
Young A. Jee ◽  
Suk-Joong L. Kang ◽  
Hyungsik Chung
Keyword(s):  
Dihedral Angle ◽  
Formation Mechanism ◽  
Dihedral Angles ◽  
Infiltration Process ◽  
Free Region ◽  
Melt Infiltration ◽  
Zero Degree ◽  
The Difference ◽  
Crystallographic Planes

When a melt of BaO and CuO mixture was infiltrated into sintered Y2BaCuO5(211) compact to form YBa2Cu3Ox(123) superconductor, butterfly-like plane patterns of 211-free regions were observed to form within growing 123 grains. In a 123 grain, the 211-free region was found to be a pair of vertex-shared pyramids and 211 entrapped region to be the rest of the bulk of the grain. An observation of patterns and cracks formed within 123 grains revealed the base of the pyramids to be (001) plane. The difference in entrapment, which depends on crystallographic planes and results in the formation of the pattern, was explained by the dihedral angles between 123 and 211. The dihedral angle between a - (or b-) plane and 211, which is believed to be greater than zero degree, might cause the entrapment of 211 particles in a [100] (or [010]) direction. In contrast, the dihedral angle of most probably zero degree between c-plane and 211 inhibited the entrapment. The observed shape of 211 particles in front of a-(or b-) and c-planes supports the above explanation of 211 entrapment to form the butterfly-like patterns. was explained by the dihedral angles between 123 and 211. The dihedral angle between a- (or b-) plane and 211, which is believed to be greater than zero degree, might cause the entrapment of 211 particles in a [100] (or [010[) direction. In contrast, the dihedral angle of most probably zero degree between c-plane and 211 inhibited the entrapment. The observed shape of 211 particles in front of a-(or b-) and c-planes supports the above explanation of 211 entrapment to form the butterfly-like patterns.

Electronic Structures of P-Type Doped CuInS2

1996 ◽  
Vol 426 ◽  
Author(s):  
T. Yamamoto ◽  
H. Katayama-Yoshida
Keyword(s):  
Electronic Structures ◽  
Electronic Band Structure ◽  
Spherical Wave ◽  
Material Design ◽  
Electronic Band ◽  
Design Considerations ◽  
Band Structure Calculations ◽  
P Type ◽  
Structure Calculations ◽  
Codoping Method

AbstractWe have studied the electronic structures of CuIn(S0.875X0.125)2 (X=B, C, N, Si or P) based on the ab-initio electronic band structure calculations using the augmented spherical wave (ASW) method. We have clarified that the physical characteristics of the p-type doped CuInS2 crystals are mainly determined by a change in the strength of interactions between Cu and S atoms. On the basis of the calculated results, we discussed the material design considerations, such as controlling the strength of resistivity for p-type doped CulnS2 materials and converting the conduction type, from n-type to p-type by a codoping method.

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