Grain Boundary Resistivity in Yttria-Stabilized Zirconia

Author(s):  
Jun Wang ◽  
Hans Conrad
2013 ◽  
Vol 2013 ◽  
pp. 1-4 ◽  
Author(s):  
J. Wang ◽  
A. Du ◽  
Di Yang ◽  
R. Raj ◽  
H. Conrad

The grain size dependence of the bulk resistivity of 3 mol% yttria-stabilized zirconia at 1400°C was determined from the effect of a dc electric field Ea=18.1 V/cm on grain growth and the corresponding electric current during isothermal annealing tests. Employing the brick layer model, the present annealing test results were in accordance with extrapolations of the values obtained at lower temperature employing impedance spectroscopy and 4-point-probe dc. The combined values give that the magnitude of the grain boundary resistivity ρb=133 ohm-cm. The electric field across the grain boundary width was 28–43 times the applied field for the grain size and current ranges in the present annealing test.


2016 ◽  
Vol 18 (15) ◽  
pp. 10486-10491 ◽  
Author(s):  
Edmund M. Mills ◽  
Matthias Kleine-Boymann ◽  
Juergen Janek ◽  
Hao Yang ◽  
Nigel D. Browning ◽  
...  

The grain boundary resistance of nano-columnar yttria-stabilized zirconia thin films is almost completely eliminated near the film–substrate interface through substrate induced magnesium doping.


2004 ◽  
Vol 10 (S02) ◽  
pp. 304-305 ◽  
Author(s):  
James P Buban ◽  
Katsuyuki Matsunaga ◽  
Takahisa Yamamoto ◽  
Yuichi Ikuhara

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.


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