Synthesis of a Porous SiC Material from Polycarbosilane by Direct Foaming and Radiation Curing

Author(s):  
Akira Idesaki ◽  
Masaki Sugimoto ◽  
Masahito Yoshikawa
Author(s):  
C. H. Carter ◽  
J. E. Lane ◽  
J. Bentley ◽  
R. F. Davis

Silicon carbide (SiC) is the generic name for a material which is produced and fabricated by a number of processing routes. One of the three SiC materials investigated at NCSU is Norton Company's NC-430, which is produced by reaction-bonding of Si vapor with a porous SiC host which also contains free C. The Si combines with the free C to form additional SiC and a second phase of free Si. Chemical vapor deposition (CVD) of CH3SiCI3 onto a graphite substrate was employed to produce the second SiC investigated. This process yielded a theoretically dense polycrystalline material with highly oriented grains. The third SiC was a pressureless sintered material (SOHIO Hexoloy) which contains B and excess C as sintering additives. These materials are candidates for applications such as components for gas turbine, adiabatic diesel and sterling engines, recouperators and heat exchangers.


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Vol 8 (6) ◽  
pp. 1974-1977 ◽  
Author(s):  
T. V. Torchynska ◽  
A. Diaz Cano ◽  
J. A. Yescas Hernandez ◽  
Yu. V. Vorobiev ◽  
L. V. Shcherbyna
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pp. 143-147 ◽  
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G. N. Pyankov
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