ASYMPTOTIC EVALUATION OF RADIATION AND DIFFRACTION TYPE INTEGRALS FOR HIGH FREQUENCIES

2021 ◽  
pp. 752-817
Keyword(s):  
High Frequencies ◽  
Asymptotic Evaluation

Quasi-Periodic Oscillations in Dwarf Novae

1979 ◽  
Vol 46 ◽  
pp. 77-88
Author(s):  
Edward L. Robinson
Keyword(s):  
Binary Systems ◽  
Outer Edge ◽  
Light Curves ◽  
Close Binary ◽  
Bright Spot ◽  
Dwarf Novae ◽  
Periodic Oscillations ◽  
High Frequencies ◽  
Short Period ◽  
Typical Time

Three distinct kinds of rapid variations have been detected in the light curves of dwarf novae: rapid flickering, short period coherent oscillations, and quasi-periodic oscillations. The rapid flickering is seen in the light curves of most, if not all, dwarf novae, and is especially apparent during minimum light between eruptions. The flickering has a typical time scale of a few minutes or less and a typical amplitude of about .1 mag. The flickering is completely random and unpredictable; the power spectrum of flickering shows only a slow decrease from low to high frequencies. The observations of U Gem by Warner and Nather (1971) showed conclusively that most of the flickering is produced by variations in the luminosity of the bright spot near the outer edge of the accretion disk around the white dwarf in these close binary systems.

ОСОБЕННОСТИ ПРОЕКТИРОВАНИЯ СВЧ-КЛЮЧЕЙ В РАЗНЫХ КОНСТРУКТИВНО-ТЕХНОЛОГИЧЕСКИХ БАЗИСАХ

2020 ◽  
Vol 96 (3s) ◽  
pp. 627-630
Author(s):  
А.Д. Калёнов ◽  
И.И. Мухин ◽  
В.В. Репин
Keyword(s):  
High Frequencies ◽  
Basic Parameters ◽  
Parasitic Effects ◽  
Soi Cmos

Представляется сравнение СВЧ-ключей, проектируемых в разных конструктивно-технологических базисах: КНИ, КМОП, биполярные и GaAs. Определенные трудности существуют при разработке ключей на сверхвысоких частотах, в разных технологиях необходимо учитывать различные эффекты. Наличие паразитных эффектов сильно осложняет разработку. В статье приводится оценка влияния паразитных эффектов на основные параметры СВЧ-ключей в разных конструктивно-технологических базисах. The paper offers a comparison of microwave keys designed in different structural and technological bases: SOI, CMOS, bipolar and GaAs. There are some difficulties in developing the keys to the ultra-high frequencies, in different technologies it is necessary to consider various effects. The presence of parasitic effects greatly complicates the development. The article provides an assessment of the influence of parasitic effects on the basic parameters of microwave keys in different structural and technological bases.

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