Band Alignment of 2D Transition Metal Dichalcogenide Heterojunctions

2016 ◽  
Vol 27 (19) ◽  
pp. 1603756 ◽  
Author(s):  
Ming-Hui Chiu ◽  
Wei-Hsuan Tseng ◽  
Hao-Ling Tang ◽  
Yung-Huang Chang ◽  
Chang-Hsiao Chen ◽  
...  
2016 ◽  
Vol 18 (23) ◽  
pp. 15632-15638 ◽  
Author(s):  
Wei Wei ◽  
Ying Dai ◽  
Baibiao Huang

Two-dimensional TMD in-plane heterostructures demonstrate true type-II band alignment and the built-in electric field makes the defect states consecutive.


2018 ◽  
Vol 30 (37) ◽  
pp. 374002 ◽  
Author(s):  
L Meckbach ◽  
U Huttner ◽  
L C Bannow ◽  
T Stroucken ◽  
S W Koch

2021 ◽  
Vol 103 (4) ◽  
Author(s):  
Francis H. Davies ◽  
Conor J. Price ◽  
Ned T. Taylor ◽  
Shane G. Davies ◽  
Steven P. Hepplestone

2015 ◽  
Vol 17 (43) ◽  
pp. 29380-29386 ◽  
Author(s):  
Wei Wei ◽  
Ying Dai ◽  
Qilong Sun ◽  
Na Yin ◽  
Shenghao Han ◽  
...  

In-plane two-dimensional MoS2/WS2 and MoSe2/WS2 heterostructures have been identified to show type-II band alignment and interface band bending.


Nano Letters ◽  
2020 ◽  
Vol 20 (7) ◽  
pp. 5111-5118 ◽  
Author(s):  
Carmen Rubio-Verdú ◽  
Antonio M. Garcı́a-Garcı́a ◽  
Hyejin Ryu ◽  
Deung-Jang Choi ◽  
Javier Zaldı́var ◽  
...  

Nano Letters ◽  
2021 ◽  
Vol 21 (8) ◽  
pp. 3341-3354
Author(s):  
Seung-Young Seo ◽  
Dong-Hwan Yang ◽  
Gunho Moon ◽  
Odongo F. N. Okello ◽  
Min Yeong Park ◽  
...  

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