scholarly journals Expanded Phase Distribution in Low Average Layer‐Number 2D Perovskite Films: Toward Efficient Semitransparent Solar Cells

2021 ◽  
pp. 2104868
Author(s):  
Yi Yang ◽  
Cheng Liu ◽  
Hiroyuki Kanda ◽  
Yong Ding ◽  
Hao Huang ◽  
...  
2018 ◽  
Vol 123 (12) ◽  
pp. 123101 ◽  
Author(s):  
Dong Hee Shin ◽  
Jong Min Kim ◽  
Chan Wook Jang ◽  
Ju Hwan Kim ◽  
Sung Kim ◽  
...  

ACS Nano ◽  
2020 ◽  
Vol 14 (4) ◽  
pp. 4871-4881 ◽  
Author(s):  
Zhiyuan Xu ◽  
Di Lu ◽  
Feng Liu ◽  
Hongtao Lai ◽  
Xiangjian Wan ◽  
...  

2021 ◽  
Vol 9 ◽  
Author(s):  
Hong Zhong ◽  
Renlai Zhou ◽  
Xiaoqing Wu ◽  
Xiaoyun Lin ◽  
Ya Wang ◽  
...  

We report our investigation on the S-shaped current–voltage characteristics in a hot-casting–processed (BA)2 (MA)3Pb4I13 Ruddlesden–Popper (RP) perovskite solar cell. The two-dimensional perovskite solar cells are fabricated with NiOx as the hole transport layer (HTL), which leads to significantly high open-circuit voltage (Voc). The champion device shows a Voc of 1.21 V and a short current density (Jsc) of 17.14 mA/cm2, leading to an overall power conversion efficiency (PCE) of 13.7%. Although the PCE is much higher than the control device fabricated on PEDOT:PSS, a significant S-shaped current–voltage behavior is observed in these NiOx-based devices. It is found that the S-shaped current–voltage behavior is related to the lower dimensional phase distribution and crystallinity at the bottom interface of the RP perovskite layer, and the S-shaped distortion is less severe after the device ageing test.


2013 ◽  
Vol 750-752 ◽  
pp. 923-926
Author(s):  
Shun Jian Xu ◽  
Yu Feng Luo ◽  
Wei Zhong ◽  
Zong Hu Xiao ◽  
Yong Ping Luo ◽  
...  

Four types of graphene nanosheets (GNs) with different graphene layer number were employed to fabricate counter electrode for dyesensitized solar cells (DSCs), with emphasis on understanding the influence of graphene layer number on the properties of the counter electrode and the device. The results show that with the graphene layer number of the GNs increases from 3 to 8, both efficiency and fill factor of the GNs based DSCs firstly climb and reach a peak at 6 of graphene layer number, and then decline with further increasing. Electrochemical impedance spectroscopy (EIS) reveals that when the graphene layer number of the GNs increases from 3 to 6, the decreased sheet resistance of the electrode and the strengthened capability of electrolyte diffusion in the electrode result in the improvement of the photovoltaic performances of the DSCs. However, when the graphene layer number further ascends to 8, the weakened capabilities of both catalytic activity of the electrode for the reduction and electrolyte diffusion in the electrode lead to the poor photovoltaic performances of the device.


MRS Advances ◽  
2016 ◽  
Vol 1 (14) ◽  
pp. 891-899
Author(s):  
Roger E. Welser ◽  
Ashok K. Sood ◽  
S. Rao Tatavarti ◽  
Andree Wibowo ◽  
David M. Wilt

ABSTRACTNanostructured quantum well and quantum dot solar cells are being widely investigated as a means of extending infrared absorption and enhancing photovoltaic device performance. In this work, we describe the impact of nanostructured layer number on the performance of flexible, highvoltage InGaAs/GaAs quantum well solar cells. Multiple quantum well structures are observed to have a higher short circuit current but a lower open circuit voltage than similar single quantum well structures. Analysis of the underlying dark diode characteristics indicate that these highvoltage structures are limited by radiative recombination at high bias levels. The results of this study suggest that future development efforts should focus on maximizing the current generating capability of a limited number of nanostructured layers and minimizing recombination within the nanostructured absorber.


Nano Energy ◽  
2018 ◽  
Vol 46 ◽  
pp. 81-90 ◽  
Author(s):  
Pengqing Bi ◽  
Tong Xiao ◽  
Xiaoyu Yang ◽  
Mengsi Niu ◽  
Zhenchuan Wen ◽  
...  

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