High-Performance Organic Thin-Film Transistor Based on a Dipolar Organic Semiconductor

2012 ◽  
Vol 24 (42) ◽  
pp. 5750-5754 ◽  
Author(s):  
Lizhen Huang ◽  
Matthias Stolte ◽  
Hannah Bürckstümmer ◽  
Frank Würthner
Keyword(s):  
Thin Film ◽  
Organic Semiconductor ◽  
High Performance ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor

Improving the Organic Semiconductor- Metal Contact Interface in Printed High Performance Organic TFTs

2012 ◽  
Vol 1402 ◽  
Author(s):  
Kanan Puntambekar ◽  
Lisa Stecker ◽  
Kurt Ulmer ◽  
Themistokles Afentakis ◽  
Steven Droes
Keyword(s):  
Organic Semiconductor ◽  
High Performance ◽  
Thin Film Transistor ◽  
Device Performance ◽  
Organic Thin Film ◽  
Contact Interface ◽  
Organic Thin Film Transistor ◽  
Metal Electrodes ◽  
Free Surfaces ◽  
Gas Plasma

ABSTRACTOptimization of the interface between the organic semiconductor (OSC) & the source-drain (S/D) electrode is critical in order to improve organic thin film transistor (OTFT) device performance. This process typically involves coating the metal S/D electrodes with an optimal self-assembled thiol layer; a process that requires pristine metal surfaces for successful treatment. Obtaining contamination free surfaces can be challenging in the case of printed metal electrodes. Here we demonstrate an effective strategy to address this issue by introducing a brief low power forming gas plasma treatment prior to the surface coating step. We show a two orders of magnitude decrease in the contact resistance as a result of this treatment.

Organic Semiconductor Based on Asymmetric Naphthalene-Thiophene Molecule for Organic Thin Film Transistor

2014 ◽  
Vol 14 (8) ◽  
pp. 6172-6176 ◽  
Author(s):  
So Min Park ◽  
Il Kang ◽  
Jae Yeol Ma ◽  
Sang Yong Nam ◽  
Jaeyoung Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Organic Semiconductor ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Thiophene Molecule

Preparation of High-Performance Organic Thin-Film Transistor Through Surface Modification

2013 ◽  
Vol 28 (4) ◽  
pp. 490-494
Author(s):  
林广庆 LIN Guang-qing ◽  
李鹏 LI Peng ◽  
王明晖 WANG Ming-hui ◽  
冯翔 FENG Xiang ◽  
张俊 ZHANG Jun ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Modification ◽  
High Performance ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor

Interface Engineering With Polystyrene for High-Performance, Low-Voltage Driven Organic Thin Film Transistor

2020 ◽  
Vol 67 (4) ◽  
pp. 1751-1756
Author(s):  
Md. Mehedi Hasan ◽  
Md. Mobaidul Islam ◽  
Xiuling Li ◽  
Mingqian He ◽  
Robert Manley ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Interface Engineering ◽  
Organic Thin Film Transistor

High Performance Organic Thin Film Transistor Based on Top-Gate Configuration

2012 ◽  
Vol 27 (3) ◽  
pp. 313-317
Author(s):  
洪飞 HONG Fei ◽  
谭莉 TIAN Li ◽  
朱棋锋 ZHU Qi-feng ◽  
向长江 XIANG Chang-jiang ◽  
韩学斌 HAN Xue-bin ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor

The Photocurrent Characteristic Analysis of the Copper Phthalocyanine Organic Thin Film Transistor Irradiated by 700 nm Monochromatic Light

2014 ◽  
Vol 981 ◽  
pp. 951-954
Author(s):  
Yue Zhang ◽  
Dong Xing Wang ◽  
Jia Bin Chen ◽  
Yue Shan ◽  
Jing Hua Yin ◽  
...  
Keyword(s):  
Thin Film ◽  
Organic Semiconductor ◽  
Copper Phthalocyanine ◽  
Thin Film Transistor ◽  
Monochromatic Light ◽  
Semiconductor Material ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Characteristic Analysis ◽  
Current Increase

By using organic semiconductor CuPc as photosensitive materials, we prepared an organic thin film transistor with the vertical structure consisted of metal Cu/ organic semiconductor CuPc/ Al/ organic semiconductor CuPc/ indium tin oxide ITO. CuPc semiconductor material has good photosensitive properties in the 700 nm light. When the light signal irradiates organic semiconductor photosensitive material, the electron-hole exciton is separated into photocurrent in built-in electric field produced by organic semiconductor material/ metal schottky contact. It transforms into the driving current of organic photoelectric triode. By using its current amplification effect, the output current increase obviously. The test result shows that the I-V characteristics of the transistor are obvious unsaturated triode characteristics. When using 700 nm light to irradiate the device, the working current of the device increases obviously.

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