Organic Semiconductor Based on Asymmetric Naphthalene-Thiophene Molecule for Organic Thin Film Transistor

2014 ◽  
Vol 14 (8) ◽  
pp. 6172-6176 ◽  
Author(s):  
So Min Park ◽  
Il Kang ◽  
Jae Yeol Ma ◽  
Sang Yong Nam ◽  
Jaeyoung Hwang ◽  
...  
2014 ◽  
Vol 981 ◽  
pp. 951-954
Author(s):  
Yue Zhang ◽  
Dong Xing Wang ◽  
Jia Bin Chen ◽  
Yue Shan ◽  
Jing Hua Yin ◽  
...  

By using organic semiconductor CuPc as photosensitive materials, we prepared an organic thin film transistor with the vertical structure consisted of metal Cu/ organic semiconductor CuPc/ Al/ organic semiconductor CuPc/ indium tin oxide ITO. CuPc semiconductor material has good photosensitive properties in the 700 nm light. When the light signal irradiates organic semiconductor photosensitive material, the electron-hole exciton is separated into photocurrent in built-in electric field produced by organic semiconductor material/ metal schottky contact. It transforms into the driving current of organic photoelectric triode. By using its current amplification effect, the output current increase obviously. The test result shows that the I-V characteristics of the transistor are obvious unsaturated triode characteristics. When using 700 nm light to irradiate the device, the working current of the device increases obviously.


2012 ◽  
Vol 24 (42) ◽  
pp. 5750-5754 ◽  
Author(s):  
Lizhen Huang ◽  
Matthias Stolte ◽  
Hannah Bürckstümmer ◽  
Frank Würthner

2012 ◽  
Vol 1402 ◽  
Author(s):  
Kanan Puntambekar ◽  
Lisa Stecker ◽  
Kurt Ulmer ◽  
Themistokles Afentakis ◽  
Steven Droes

ABSTRACTOptimization of the interface between the organic semiconductor (OSC) & the source-drain (S/D) electrode is critical in order to improve organic thin film transistor (OTFT) device performance. This process typically involves coating the metal S/D electrodes with an optimal self-assembled thiol layer; a process that requires pristine metal surfaces for successful treatment. Obtaining contamination free surfaces can be challenging in the case of printed metal electrodes. Here we demonstrate an effective strategy to address this issue by introducing a brief low power forming gas plasma treatment prior to the surface coating step. We show a two orders of magnitude decrease in the contact resistance as a result of this treatment.


2016 ◽  
Vol 63 (5) ◽  
pp. 2057-2065 ◽  
Author(s):  
T. K. Maiti ◽  
L. Chen ◽  
H. Zenitani ◽  
H. Miyamoto ◽  
M. Miura-Mattausch ◽  
...  

Author(s):  
Koichiro Asano ◽  
Yui Sasaki ◽  
Qi Zhou ◽  
Riho Mitobe ◽  
Wei Tang ◽  
...  

We herein report an extended gate-type organic thin-film transistor (OTFT)-based polyamine sensor and its application for pattern recognition. The extended-gate electrode was functionalized with a complex of copper(II) ions and...


2003 ◽  
Author(s):  
Toshihide Kamata ◽  
Manabu Yoshida ◽  
Sei Uemura ◽  
Satoshi Hoshino ◽  
Noriyuki Takada ◽  
...  

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