scholarly journals Chasing the “Killer” Phonon Mode for the Rational Design of Low‐Disorder, High‐Mobility Molecular Semiconductors

2019 ◽  
Vol 31 (43) ◽  
pp. 1902407 ◽  
Author(s):  
Guillaume Schweicher ◽  
Gabriele D'Avino ◽  
Michael T. Ruggiero ◽  
David J. Harkin ◽  
Katharina Broch ◽  
...  
2017 ◽  
Vol 16 (10) ◽  
pp. 998-1002 ◽  
Author(s):  
S. Fratini ◽  
S. Ciuchi ◽  
D. Mayou ◽  
G. Trambly de Laissardière ◽  
A. Troisi

Science ◽  
2021 ◽  
pp. eabd3230
Author(s):  
Kenji Yasuda ◽  
Xirui Wang ◽  
Kenji Watanabe ◽  
Takashi Taniguchi ◽  
Pablo Jarillo-Herrero

2D ferroelectrics with robust polarization down to atomic thicknesses provide building blocks for functional heterostructures. Experimental realization remains challenging because of the requirement of a layered polar crystal. Here, we demonstrate a rational design approach to engineering 2D ferroelectrics from a non-ferroelectric parent compound via employing van der Waals assembly. Parallel-stacked bilayer boron nitride exhibits out-of-plane electric polarization that reverses depending on the stacking order. The polarization switching is probed via the resistance of an adjacently stacked graphene sheet. Twisting the boron nitride sheets by a small angle changes the dynamics of switching thanks to the formation of moiré ferroelectricity with staggered polarization. The ferroelectricity persists to room temperature while keeping the high mobility of graphene, paving the way for potential ultrathin nonvolatile memory applications.


2016 ◽  
Vol 27 (2) ◽  
pp. 1604608 ◽  
Author(s):  
Yang Wang ◽  
Tsukasa Hasegawa ◽  
Hidetoshi Matsumoto ◽  
Takehiko Mori ◽  
Tsuyoshi Michinobu

Author(s):  
Andrey Sosorev ◽  
Dmitry Dominskiy ◽  
Ivan Chernyshov ◽  
Roman Efremov

Chemical versatility of organic semiconductors provides nearly unlimited opportunities for tuning their electronic properties. However, despite decades of research, relationship between molecular structure, molecular packing and charge mobility in these materials remains poorly understood. This reduces the search for high-mobility organic semiconductors to the inefficient trial-and-error approach. For clarifying the abovementioned relationship, investigations of the effect of small changes in the chemical structure on OSs properties are particularly important. In this study, we address computationally the impact of substitution of C-H atom pairs by nitrogen atoms (N-substitution) on molecular properties, molecular packing and charge mobility of crystalline oligoacenes. Besides of decreasing frontier molecular orbital levels, N-substitution dramatically alters molecular electrostatic potential yielding pronounced electron-rich and electron-deficient areas. These changes in the molecular electrostatic potential strengthen face-to-face and edge-to-edge interactions in the corresponding crystals and result in the crossover from the herringbone packing motif to π-stacking. When the electron-rich and electron-deficient areas are large, sharply defined and, probably, have certain symmetry, charge mobility increases up to 3-4 cm2V-1s-1. The results obtained highlight the potential of azaacenes for application in organic electronic devices and are expected to facilitate rational design of organic semiconductors for steady improvement of organic electronics.


2013 ◽  
pp. 201-238
Author(s):  
Henning Sirringhaus ◽  
Tomo Sakanoue ◽  
Jui-Fen Chang

2012 ◽  
Vol 249 (9) ◽  
pp. 1655-1676 ◽  
Author(s):  
Henning Sirringhaus ◽  
Tomo Sakanoue ◽  
Jui-Fen Chang

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