Device Fabrication Based on Oxidative Chemical Vapor Deposition (oCVD) Synthesis of Conducting Polymers and Related Conjugated Organic Materials

2018 ◽  
Vol 6 (1) ◽  
pp. 1801564 ◽  
Author(s):  
Meysam Heydari Gharahcheshmeh ◽  
Karen K. Gleason
Keyword(s):  
Chemical Vapor Deposition ◽  
Conducting Polymers ◽  
Vapor Deposition ◽  
Organic Materials ◽  
Chemical Vapor ◽  
Device Fabrication ◽  
Conjugated Organic Materials

Effect of Ni on graphite thin‐film formation from organic materials by chemical vapor deposition

1995 ◽  
Vol 13 (4) ◽  
pp. 2142-2145 ◽  
Author(s):  
Masako Yudasaka ◽  
Rie Kikuchi ◽  
Takeo Matsui ◽  
Kouji Tasaka ◽  
Yoshimasa Ohki ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Organic Materials ◽  
Film Formation ◽  
Chemical Vapor ◽  
Thin Film Formation

Six-Inch Diameter GaAs on Si Wafers

1988 ◽  
Vol 116 ◽  
Author(s):  
Jack P. Salerno ◽  
D. S. Hill ◽  
J. W. Lee ◽  
R. E. McCullough ◽  
John C. C. Fan
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Device Fabrication ◽  
High Quality ◽  
Gaas On Si ◽  
Mechanical And Electrical Properties ◽  
Crystal Gaas ◽  
Specular Surfaces

AbstractThe growth of high-quality single crystal GaAs on Si wafers up to six inches in diameter by organometallic chemical vapor deposition (OMCVD) is reported. These wafers have specular surfaces, excellent thickness uniformity, and are shown to have properties comparable to those of smaller diameter GaAs on Si wafers. The mechanical and electrical properties of the six inch GaAs on Si wafers are shown to be suitable for GaAs device fabrication.

Application of RTP-CVD Technology to Ulsi Device Fabrication

1991 ◽  
Vol 224 ◽  
Author(s):  
K. H. Jung ◽  
T. Y. Hsieh ◽  
D. L. Kwong
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Chemical Vapor ◽  
Device Fabrication ◽  
Selective Growth ◽  
Research Areas ◽  
Made In

AbstractRapid thermal processing chemical vapor deposition (RTP-CVD) has received considerable attention as a novel in-situ multi-processing tool capable of meeting the stringent requirements of ULSI device fabrication. In this paper, we review the progress made in developing and applying RTP-CVD to ULSI device fabrication. Research areas discussed include epitaxial Si and poly-Si growth, in-situ doping, selective growth, in-situ multi-processing, and novel dielectrics. In addition, the extension of RTP-CVD to novel materials such as GexSi1−x has produced device quality films with successful application in HBTs and Si-based optoelectronics.

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