scholarly journals Correction to ‘Molecular Dynamics Simulations of the “Breathing” Phase Transformation of MOF Nanocrystallites’

2020 ◽  
Vol 3 (2) ◽  
pp. 1900241
RSC Advances ◽  
2017 ◽  
Vol 7 (3) ◽  
pp. 1357-1362 ◽  
Author(s):  
Jing Han ◽  
Song Xu ◽  
Jiapeng Sun ◽  
Liang Fang ◽  
Hua Zhu

Large-scale molecular dynamics simulations of nanoindentation on a (100) oriented silicon surface were performed to investigate the mechanical behavior and phase transformation of single crystalline silicon.


Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 733
Author(s):  
Zhi-Chao Ma ◽  
Xiao-Zhi Tang ◽  
Yong Mao ◽  
Ya-Fang Guo

The deformation mechanisms of Mg, Zr, and Ti single crystals with different orientations are systematically studied by using molecular dynamics simulations. The affecting factors for the plasticity of hexagonal close-packed (hcp) metals are investigated. The results show that the basal <a> dislocation, prismatic <a> dislocation, and pyramidal <c + a> dislocation are activated in Mg, Zr, and Ti single crystals. The prior slip system is determined by the combined effect of the Schmid factor and the critical resolved shear stresses (CRSS). Twinning plays a crucial role during plastic deformation since basal and prismatic slips are limited. The 101¯2 twinning is popularly observed in Mg, Zr, and Ti due to its low CRSS. The 101¯1 twin appears in Mg and Ti, but not in Zr because of the high CRSS. The stress-induced hcp-fcc phase transformation occurs in Ti, which is achieved by successive glide of Shockley partial dislocations on basal planes. More types of plastic deformation mechanisms (including the cross-slip, double twins, and hcp-fcc phase transformation) are activated in Ti than in Mg and Zr. Multiple deformation mechanisms coordinate with each other, resulting in the higher strength and good ductility of Ti. The simulation results agree well with the related experimental observation.


Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4157
Author(s):  
Dariusz Chrobak ◽  
Grzegorz Ziółkowski ◽  
Artur Chrobak

With classical molecular dynamics simulations, we demonstrated that doping of the InP crystal with Zn and S atoms reduces the pressure of the B3→B1 phase transformation as well as inhibits the development of a dislocation structure. On this basis, we propose a method for determining the phenomenon that initiates nanoscale plasticity in semiconductors. When applied to the outcomes of nanoindentation experiments, it predicts the dislocation origin of the elastic-plastic transition in InP crystal and the phase transformation origin of GaAs incipient plasticity.


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