ChemInform Abstract: ORDERED FLUORITE-RELATED PHASES IN THE SYSTEMS ZIRCONIUM OXIDE (HAFNIUM OXIDE)-MAGNESIUM OXIDE-NIOBIUM PENTOXIDE (TANTALUM PENTOXIDE) SYSTEMS

1982 ◽  
Vol 13 (43) ◽  
Author(s):  
D. MICHEL ◽  
M. PEREZ Y JORBA
Keyword(s):  
Magnesium Oxide ◽  
Zirconium Oxide ◽  
Hafnium Oxide ◽  
Niobium Pentoxide ◽  
Tantalum Pentoxide

The impact of the mass density on selected optical and non-optical properties of oxide coatings

2014 ◽  
Vol 3 (1) ◽  
Author(s):  
Olaf Stenzel
Keyword(s):  
Silicon Dioxide ◽  
Zirconium Oxide ◽  
Hafnium Oxide ◽  
Optical Constants ◽  
Mass Density ◽  
Tantalum Pentoxide ◽  
Optical Coatings ◽  
Oxide Coatings ◽  
Numerous Experimental Data ◽  
The Impact

AbstractThe density of optical coatings is one of the most crucial material-related parameters in interference coating science and technology. It has an impact on the refractive index, the transparency range, and the mechanical stress of a coating material. This tutorial provides a background on the classical theory relating the coating density to the mentioned parameters. Simple models are presented that highlight the correlations between optical constants, stress, and shifting behavior of different oxide coatings. Comparison with the experiment is performed on the basis of numerous experimental data, which stem from hafnium oxide, zirconium oxide, tantalum pentoxide, and silicon dioxide.

Etching of Zirconium Oxide, Hafnium Oxide, and Hafnium Silicates in Dilute Hydrofluoric Acid Solutions

2004 ◽  
Vol 19 (4) ◽  
pp. 1149-1156 ◽  
Author(s):  
Viral Lowalekar ◽  
Srini Raghavan
Keyword(s):  
Hydrofluoric Acid ◽  
Zirconium Oxide ◽  
Hafnium Oxide ◽  
High Dielectric Constant ◽  
Chemical Vapor ◽  
Oxide Thickness ◽  
Heat Treated ◽  
Paper Work ◽  
High Dielectric ◽  
Work Done

Oxides and silicates of zirconium and hafnium are actively being considered and tested to replace SiO2 as the gate material. Though these materials have the high-dielectric constant (k ∼ 20–25) needed to provide a larger equivalent oxide thickness, they are very refractory and difficult to etch by wet and dry methods. In this paper, work done on wet etching of ZrO2, HfO2, and HfSixOy in dilute hydrofluoric acid (HF) solutions is presented and discussed. Experiments were done on various high-k films deposited by metalorganic chemical vapor deposition. It was found that the as-deposited high-k films can be dissolved with a good selectivity over SiO2 in dilute HF solutions, but heat-treated high-k films are difficult to etch with good selectivity over SiO2 under the same conditions.

Adsorption of Moisture and Organic Contaminants on Hafnium Oxide, Zirconium Oxide, and Silicon Oxide Gate Dielectrics

2003 ◽  
Vol 150 (10) ◽  
pp. F186 ◽  
Author(s):  
Prashant Raghu ◽  
Niraj Rana ◽  
Chris Yim ◽  
Eric Shero ◽  
Farhang Shadman
Keyword(s):  
Organic Contaminants ◽  
Zirconium Oxide ◽  
Hafnium Oxide ◽  
Silicon Oxide ◽  
Gate Dielectrics

scholarly journals Studies on Niobium Pentoxide and Tantalum Pentoxide

1965 ◽  
Vol 81 (920) ◽  
pp. 30-34
Author(s):  
Riichi BABA ◽  
Kouzi IMAGAWA ◽  
Shunzi KIUCHI
Keyword(s):  
Niobium Pentoxide ◽  
Tantalum Pentoxide

On the System Niobium Pentoxide—Tantalum Pentoxide

1964 ◽  
Vol 68 (1) ◽  
pp. 208-210 ◽  
Author(s):  
G. P. Mohanty ◽  
L. J. Fiegel ◽  
J. H. Healy
Keyword(s):  
Niobium Pentoxide ◽  
Tantalum Pentoxide

Properties of calcium silicate-monobasic calcium phosphate materials for endodontics containing tantalum pentoxide and zirconium oxide

2018 ◽  
Vol 23 (1) ◽  
pp. 445-457 ◽  
Author(s):  
Fausto Zamparini ◽  
Francesco Siboni ◽  
Carlo Prati ◽  
Paola Taddei ◽  
Maria Giovanna Gandolfi
Keyword(s):  
Calcium Phosphate ◽  
Calcium Silicate ◽  
Zirconium Oxide ◽  
Tantalum Pentoxide ◽  
Monobasic Calcium Phosphate

scholarly journals Impact of the Ferroelectric Stack Lamination in Si Doped Hafnium Oxide (HSO) and Hafnium Zirconium Oxide (HZO) Based FeFETs: Toward High-Density Multi-Level Cell and Synaptic Storage

2021 ◽  
Vol 2 (3) ◽  
pp. 344-369
Author(s):  
Tarek Ali ◽  
Kati Kühnel ◽  
Ricardo Olivo ◽  
David Lehninger ◽  
Franz Müller ◽  
...  
Keyword(s):  
Zirconium Oxide ◽  
Hafnium Oxide ◽  
Ferroelectric Properties ◽  
Charge Trapping ◽  
Switching Speed ◽  
Columnar Grains ◽  
Lower Maximum ◽  
Si Doped ◽  
Multi Level ◽  
The Impact

A multi-level cell (MLC) operation as a 1–3 bit/cell of the FeFET emerging memory is reported by utilizing optimized Si doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based on ferroelectric laminates. An alumina interlayer was used to achieve the thickness independent of the HSO and HZO-based stack with optimal ferroelectric properties. Various split thicknesses of the HSO and HZO were explored with lamination to increase the FeFET maximum memory window (MW) for a practical MLC operation. A higher MW occurred as the ferroelectric stack thickness increased with lamination. The maximum MW (3.5 V) was obtained for the HZO-based laminate; the FeFETs demonstrated a switching speed (300 ns), 10 years MLC retention, and 104 MLC endurance. The transition from instant switching to increased MLC levels was realized by ferroelectric lamination. This indicated an increased film granularity and a reduced variability through the interruption of ferroelectric columnar grains. The 2–3 bit/cell MLC levels and maximum MW were studied in terms of the size-dependent variability to indicate the impact of the ferroelectric area scaling. The impact of an alumina interlayer on the ferroelectric phase is outlined for HSO in comparison to the HZO material. For the same ferroelectric stack thickness with lamination, a lower maximum MW, and a pronounced wakeup effect was observed in HSO laminate compared to the HZO laminate. Both wakeup effect and charge trapping were studied in the context of an MLC operation. The merits of ferroelectric stack lamination are considered for an optimal FeFET-based synaptic device operation. The impact of the pulsing scheme was studied to modulate the FeFET current to mimic the synaptic weight update in long-term synaptic potentiation/depression.

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