2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)
Latest Publications

TOTAL DOCUMENTS

80

(FIVE YEARS 80)

H-INDEX

2

(FIVE YEARS 2)

Published By IEEE

9781728109428

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Hot-Carrier Injection-Induced Disturb and Improvement Methods in 3D NAND Flash Memory

2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2019.8804652 ◽

2019 ◽

Author(s):

Wei-Liang Lin ◽

Wen-Jer Tsai ◽

C.C. Cheng ◽

Chun-Chang Lu ◽

S.H. Ku ◽

...

Keyword(s):

Flash Memory ◽

Carrier Injection ◽

Nand Flash Memory ◽

Hot Carrier ◽

Hot Carrier Injection

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R&D Activities for Capacity Enhancement Using 5G Ultra High-Density Distributed Antenna Systems

2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2019.8804629 ◽

2019 ◽

Author(s):

Takashi Dateki

Keyword(s):

High Density ◽

Distributed Antenna Systems ◽

Capacity Enhancement ◽

Distributed Antenna ◽

Antenna Systems

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Backside Si passivation: Leading to high performance UTB GeOI structures for monolithic 3D integrations

2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2019.8804696 ◽

2019 ◽

Author(s):

Wen Hsin Chang ◽

Toshifumi Irisawa ◽

Hiroyuki Ishii ◽

Noriyuki Uchida ◽

Tatsuro Maeda

Keyword(s):

High Performance

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A Novel RRAM Based Watermark Technique Utilizing the Impact of Forming Conditions on Reset Distribution

2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2019.8804655 ◽

2019 ◽

Author(s):

Yachuan Pang ◽

Huaqiang Wu ◽

Bin Gao ◽

Bohan Lin ◽

He Qian

Keyword(s):

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Analysis of Transient Effect on Super-Steep SS PN-Body Tied SOI-FET

2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2019.8804639 ◽

2019 ◽

Author(s):

Takayuki Mori ◽

Jiro Ida ◽

Hiroki Endo

Keyword(s):

Transient Effect

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Selective Atomic Layer Deposition of TiO2

2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2019.8804682 ◽

2019 ◽

Author(s):

Christopher Ahles ◽

Jong Choi ◽

Keith Wong ◽

Srinivas Nemani ◽

Andrew Kummel

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Layer Deposition

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Semiconductor for 5G

2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2019.8804702 ◽

2019 ◽

Author(s):

Yujun Li

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Fabrication of $\Omega$ -gated Negative Capacitance FinFETs and SRAM

2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2019.8804663 ◽

2019 ◽

Author(s):

P.-J. Sung ◽

C.-J. Su ◽

D. D. Lu ◽

S.-X. Luo ◽

K.-H. Kao ◽

...

Keyword(s):

Negative Capacitance

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CRISP: Center for Research on Intelligent Storage and Processing-in-memory

2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2019.8804626 ◽

2019 ◽

Author(s):

Yuan Xie

Keyword(s):

Intelligent Storage

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Novel Vertically-Stacked Tensily-Strained Ge0.85Si0.15 GAA n-Channels on a Si Channel with $\mathrm{SS}=76\mathrm{mV}/\mathrm{dec}, \mathrm{DIBL} =36\mathrm{mV}/\mathrm{V}$, and $\mathrm{I}_{\mathrm{on}}/\mathrm{I}_{\mathrm{off}}=1.2\mathrm{E}7$

2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2019.8804698 ◽

2019 ◽

Author(s):

Yu-Shiang Huang ◽

Fang-Liang Lu ◽

Hung-Yu Ye ◽

Ya-Jui Tsou ◽

Yi-Chun Liu ◽

...

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