Substrate Orientation Dependence of Growth Rate of InGaAs / InP Grown by Liquid Phase Epitaxy

1982 ◽  
Vol 129 (11) ◽  
pp. 2603-2609 ◽  
Author(s):  
Kazuo Nakajima ◽  
Kenzo Akita
Keyword(s):  
Growth Rate ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Orientation Dependence ◽  
Substrate Orientation

Al diffusivity as a function of growth rate during the formation of (GaAl)As heterojunctions by liquid phase epitaxy

1981 ◽  
Vol 52 (2) ◽  
pp. 814-817 ◽  
Author(s):  
M. B. Small ◽  
R. Ghez ◽  
W. Reuter ◽  
R. M. Potemski
Keyword(s):  
Growth Rate ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy

LPE Growth of Textured KNbO3 Film Using SrTiO3 Substrate and V2O5 Flux

2006 ◽  
Vol 11-12 ◽  
pp. 109-112
Author(s):  
T. Hibino ◽  
Kenichi Kakimoto ◽  
Hitoshi Ohsato
Keyword(s):  
Thin Films ◽  
Phase Diagram ◽  
Growth Rate ◽  
Liquid Phase ◽  
Surface Morphology ◽  
Liquid Phase Epitaxy ◽  
Growth Temperature ◽  
Film Growth ◽  
Lower Growth ◽  
Lower Growth Temperature

KNbO3 thin films were grown on (100) and (110) SrTiO3 substrates by liquid phase epitaxy (LPE) technique. The film orientation and surface morphology were characterized by XRD and AFM, respectively. The limited phase diagram of K2O-Nb2O5-V2O5 system was prepared by DTA measurement to investigate the effect of V2O5 flux on the LPE growth of KNbO3 film. The use of V2O5 flux enhanced a film growth rate at lower growth temperature.

Modulation of Growth Rate by Electric Current in Liquid-Phase Epitaxy of 4H-SiC

2013 ◽  
Vol 52 (8R) ◽  
pp. 085503
Author(s):  
Takeshi Mitani ◽  
Masayuki Okamura ◽  
Tetsuo Takahashi ◽  
Naoyoshi Komatsu ◽  
Tomohisa Kato ◽  
...  
Keyword(s):  
Growth Rate ◽  
Liquid Phase ◽  
Electric Current ◽  
Liquid Phase Epitaxy

Silicon carbide grown by liquid phase epitaxy in microgravity

1998 ◽  
Vol 13 (7) ◽  
pp. 1812-1815 ◽  
Author(s):  
R. Yakimova ◽  
M. Syväjärvi ◽  
C. Lockowandt ◽  
M. K. Linnarsson ◽  
H. H. Radamson ◽  
...  
Keyword(s):  
Growth Rate ◽  
Silicon Carbide ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Carrier Lifetime ◽  
Growth Parameters ◽  
Structural Defects ◽  
Reduced Gravity ◽  
Lifetime Measurements ◽  
Microgravity Conditions

6H and 4H polytype silicon carbide (SiC) layers have been grown on ground and under microgravity conditions by liquid phase epitaxy (LPE) from a solution of SiC in Si-Sc solvent at 1750 °C. The effects of gravity on the growth parameters and material characteristiques have been studied. The growth rate, Sc incorporation, and the structural defects are modified in reduced gravity conditions, while the polytype reproduction of the substrate is not affected. The results obtained are intriguing as to further experiments providing objects for carrier lifetime measurements.

Initial stage in the liquid phase epitaxy of Nd123 films: dependence of growth rate on process parameter

2001 ◽  
Vol 357-360 ◽  
pp. 1055-1058 ◽  
Author(s):  
Ch. Krauns ◽  
S. Koyama ◽  
T. Izumi ◽  
T. Izumi ◽  
Y. Nakamura ◽  
...  
Keyword(s):  
Growth Rate ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Process Parameter ◽  
Initial Stage
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