Growth rate and parameters of gallium arsenide and indium gallium arsenide films in relation to substrate orientation in the (111)-(100) range (liquid epitaxy)

1973 ◽  
Vol 16 (6) ◽  
pp. 841-843 ◽  
Author(s):  
U. M. Kulish
Keyword(s):  
Growth Rate ◽  
Gallium Arsenide ◽  
Indium Gallium Arsenide ◽  
Substrate Orientation ◽  
Indium Gallium ◽  
Liquid Epitaxy

scholarly journals Dopant–dopant interactions in beryllium doped indium gallium arsenide: An ab initio study

2018 ◽  
Vol 33 (4) ◽  
pp. 401-413 ◽  
Author(s):  
Vadym Kulish ◽  
Wenyuan Liu ◽  
Francis Benistant ◽  
Sergei Manzhos
Keyword(s):  
Gallium Arsenide ◽  
Ab Initio ◽  
Indium Gallium Arsenide ◽  
Ab Initio Study ◽  
Indium Gallium ◽  
Image Position

Abstract

A customizable commercial miniaturized 320×256 indium gallium arsenide shortwave infrared camera

2004 ◽  
Author(s):  
Shih-Che Huang ◽  
Matthew O'Grady ◽  
Joseph V. Groppe ◽  
Martin H. Ettenberg ◽  
Robert M. Brubaker
Keyword(s):  
Gallium Arsenide ◽  
Indium Gallium Arsenide ◽  
Infrared Camera ◽  
Indium Gallium ◽  
Shortwave Infrared
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