ChemInform Abstract: GROWTH AND CHARACTERIZATION OF GALLIUM INDIUM ARSENIDE (GA0.47IN0.53AS) FILMS ON INDIUM PHOSPHIDE SUBSTRATES USING TRIETHYLGALLIUM, TRIETHYLINDIUM, AND ARSINE

1983 ◽  
Vol 14 (37) ◽  
Author(s):  
J. S. WHITELEY ◽  
S. K. GHANDHI
Keyword(s):  
Indium Phosphide ◽  
Indium Arsenide ◽  
Gallium Indium Arsenide

Fabrication, Performance, and Reliability of InP-Based HBTs

1993 ◽  
Vol 300 ◽  
Author(s):  
William E. Stanchina ◽  
Robert A. Metzger ◽  
Joseph F. Jensen ◽  
Madjid Hafizi ◽  
David B. Rensch
Keyword(s):  
Indium Phosphide ◽  
Indium Arsenide ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
Material Properties ◽  
Bipolar Transistors ◽  
Gallium Indium Arsenide ◽  
The Past ◽  
The Status ◽  
Performance Results

ABSTRACTOver the past 10 years, heterojunction bipolar transistors (HBTs) have progressed to where integrated circuit (IC) products are being sold and foundry services are being commercially offered utilizing gallium arsenide (GaAs) based technology. We will discuss, here, an alternative HBT technology based on indium phosphide (InP). While this technology is less mature than its GaAs counterpart, it offers several attractive benefits in comparison with GaAs. These benefits are provided through several key material properties of InP and ternary compound semiconductors, eg. gallium indium arsenide (GaInAs), grown on the InP. We review the status of this npn HBT technology and present performance results which illustrate the benefits of the technology with respect to electronic applications. Finally, we present measured reliability data for this technology which shows outstanding projected lifetimes.

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