Fabrication, Performance, and Reliability of InP-Based HBTs

ABSTRACTOver the past 10 years, heterojunction bipolar transistors (HBTs) have progressed to where integrated circuit (IC) products are being sold and foundry services are being commercially offered utilizing gallium arsenide (GaAs) based technology. We will discuss, here, an alternative HBT technology based on indium phosphide (InP). While this technology is less mature than its GaAs counterpart, it offers several attractive benefits in comparison with GaAs. These benefits are provided through several key material properties of InP and ternary compound semiconductors, eg. gallium indium arsenide (GaInAs), grown on the InP. We review the status of this npn HBT technology and present performance results which illustrate the benefits of the technology with respect to electronic applications. Finally, we present measured reliability data for this technology which shows outstanding projected lifetimes.

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The Challenge of GaAs Heterojunction Bipolar Transistor Integrated Circuit Technology.

MRS Proceedings ◽

10.1557/proc-144-637 ◽

1988 ◽

Vol 144 ◽

Author(s):

Han-Tzong Yuan

Keyword(s):

Integrated Circuits ◽

Heterojunction Bipolar Transistors ◽

Integrated Circuit ◽

Large Scale ◽

Ohmic Contacts ◽

Bipolar Transistors ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

The Status ◽

Impurity Doping

ABSTRACTThe status and progress of AlGaAs/GaAs heterojunction bipolar transistor integrated circuits are reviewed. The challenge of fabricating large-scale integrated circuits using heterojunction bipolar transistors is discussed. Specifically, the issues related to low defect epitaxial materials, localized impurity doping techniques, simple and reliable ohmic contacts, and multilevel interconnects are examined.

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TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100138713 ◽

1995 ◽

Vol 53 ◽

pp. 468-469

Author(s):

N. David Theodore ◽

Donald Y.C Lie ◽

J. H. Song ◽

Peter Crozier

Keyword(s):

Integrated Circuits ◽

Heterojunction Bipolar Transistors ◽

Integrated Circuit ◽

High Speed ◽

Room Temperature ◽

Strain Relaxation ◽

Bipolar Transistors ◽

Sige Hbt ◽

Integrated Circuit Manufacturing ◽

Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

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Properties and Effects of Hydrogen in GaN

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300004749 ◽

2000 ◽

Vol 5 (S1) ◽

pp. 540-550 ◽

Cited By ~ 2

Author(s):

S.J. Pearton ◽

H. Cho ◽

F. Ren ◽

J.-I. Chyi ◽

J. Han ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Residual Hydrogen ◽

Diffusion Characteristics ◽

Significant Difference ◽

Device Structures ◽

The Status ◽

The Difference ◽

Thermal Stability Of ◽

Mg Doped

The status of understanding of the behavior of hydrogen in GaN and related materials is reviewed. In particular, we discuss the amount of residual hydrogen in MOCVD-grown device structures such as heterojunction bipolar transistors, thyristors and p-i-n diodes intended for high power, high temperature applications. In these structures, the residual hydrogen originating from the growth precursors decorates Mg-doped layers and AlGaN/GaN interfaces. There is a significant difference in the diffusion characteristics and thermal stability of implanted hydrogen between n- and p-GaN, due to the stronger affinity of hydrogen to pair with acceptor dopants and possibly to the difference in H2 formation probability.

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ChemInform Abstract: GROWTH AND CHARACTERIZATION OF GALLIUM INDIUM ARSENIDE (GA0.47IN0.53AS) FILMS ON INDIUM PHOSPHIDE SUBSTRATES USING TRIETHYLGALLIUM, TRIETHYLINDIUM, AND ARSINE

Chemischer Informationsdienst ◽

10.1002/chin.198337006 ◽

1983 ◽

Vol 14 (37) ◽

Author(s):

J. S. WHITELEY ◽

S. K. GHANDHI

Keyword(s):

Indium Phosphide ◽

Indium Arsenide ◽

Gallium Indium Arsenide

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GaAs/AlGaAs heterojunction bipolar transistors for integrated circuit applications

IEEE Electron Device Letters ◽

10.1109/edl.1982.25471 ◽

1982 ◽

Vol 3 (2) ◽

pp. 43-45 ◽

Cited By ~ 25

Author(s):

W.V. McLevige ◽

H.T. Yuan ◽

W.M. Duncan ◽

W.R. Frensley ◽

F.H. Doerbeck ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Integrated Circuit ◽

Bipolar Transistors

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Properties and Effects of Hydrogen in GaN

MRS Proceedings ◽

10.1557/proc-595-f99w10.6 ◽

1999 ◽

Vol 595 ◽

Cited By ~ 1

Author(s):

S.J. Pearton ◽

H. Cho ◽

F. Ren ◽

J.-I. Chyi ◽

J. Han ◽

...

Keyword(s):

Thermal Stability ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Residual Hydrogen ◽

Diffusion Characteristics ◽

Significant Difference ◽

Device Structures ◽

The Status ◽

The Difference ◽

Thermal Stability Of

AbstractThe status of understanding of the behavior of hydrogen in GaN and related materials is reviewed. In particular, we discuss the amount of residual hydrogen in MOCVD-grown device structures such as heterojunction bipolar transistors, thyristors and p-i-n diodes intended for high power, high temperature applications. In these structures, the residual hydrogen originating from the growth precursors decorates Mgdoped layers and AlGaN/GaN interfaces. There is a significant difference in the diffusion characteristics and thermal stability of implanted hydrogen between n- and p-GaN, due to the stronger affinity of hydrogen to pair with acceptor dopants and possibly to the difference in H2 formation probability.

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