ChemInform Abstract: Organometallic Compounds in Plasma CVD (Chemical Vapour Deposition)

ChemInform ◽  
2010 ◽  
Vol 22 (8) ◽  
pp. no-no
Author(s):  
H. SUHR
1998 ◽  
Vol 76 (11) ◽  
pp. 1559-1563
Author(s):  
J Hugh Horton ◽  
Johann Rasmusson ◽  
Joseph G Shapter ◽  
Peter R Norton

The adsorption of the organometallic compounds bis(hexafluoroacetylacetonato)zinc(II) (Zn(hfac)2) and bis(hexafluoroacetylacetonato)nickel(II) (Ni(hfac)2) on the surface of Si(111)-7×7 were studied by a combination of scanning tunnelling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). These compounds are analogues of the compound bis(hexafluoroacetylacetonato)copper(II), which is an important precursor for the chemical vapour deposition of copper that we have previously studied. Both XPS and STM results indicate that the Zn(hfac)2 is adsorbed intact on the surface, and remains intact on the surface at temperatures up to 300 K. The XPS shows a transition from a physisorbed state to a chemisorbed state at temperatures between 160 and 300 K. At higher temperatures Zn(hfac)2 decomposed to form Zn and fluorocarbon fragments. The metal component diffused into the substrate. The Ni(hfac)2 complex could not be successfully adsorbed on the Si surface: it was shown that this was due to decomposition of the molecule in the vapour phase, probably due to the higher temperatures needed to evaporate this relatively involatile compound.Key words: scanning tunnelling microscopy, chemical vapour deposition, zinc, copper.


1988 ◽  
Vol 167 (1-2) ◽  
pp. 195-202 ◽  
Author(s):  
R. Feurer ◽  
M. Larhrafi ◽  
R. Morancho ◽  
R. Calsou

1985 ◽  
Vol 63 (6) ◽  
pp. 664-669 ◽  
Author(s):  
C. Blaauw ◽  
C. Miner ◽  
B. Emmerstorfer ◽  
A. J. Springthorpe ◽  
M. Gallant

GaAs epitaxial layers have been grown on semi-insulating GaAs substrates using the technique of metalorganic chemical-vapour deposition. The organometallic compounds trimethylgallium and trimethylgallium–trimethylarsenic adduct were used as source reagents for gallium, whereas arsine and trimethylarsenic were used as sources for arsenic. Photoluminescence measurements at 8 K indicated that carbon was present in the layers as the dominant background acceptor, in most cases, and to a lesser extent copper (Cu) and manganese (Mn) acceptors were also present. Secondary-ion mass spectroscopy (SIMS) analysis confirmed the presence of these acceptors. Silicon was also identified by SIMS in most layers. The concentration of Cu and Mn was correlated with the starting substrate and with the deposition parameters (growth rate, deposition temperature). It was also found that their concentration in the epitaxial layers could be reduced by a careful heat-treatment and chemical etch prior to epitaxial growth.


1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-395-Pr8-402 ◽  
Author(s):  
B. Armas ◽  
M. de Icaza Herrera ◽  
C. Combescure ◽  
F. Sibieude ◽  
D. Thenegal

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-373-Pr8-380 ◽  
Author(s):  
P. Sourdiaucourt ◽  
A. Derré ◽  
P. Delhaès ◽  
P. David

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