ChemInform Abstract: Local Structure of Bi2.2Sr1.8Cu1-xFexOy Single Crystals Determined by Scanning Tunneling Microscopy.

ChemInform ◽  
2010 ◽  
Vol 23 (31) ◽  
pp. no-no
Author(s):  
C. NIU ◽  
C. M. LIEBER
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Single Crystals ◽  
Local Structure ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

scholarly journals Scanning tunneling microscopy and spectroscopy at low temperatures of the (110) surface of Te-doped GaAs single crystals

1999 ◽  
Vol 60 (4) ◽  
pp. 2619-2626 ◽  
Author(s):  
A. Depuydt ◽  
C. Van Haesendonck ◽  
N. S. Maslova ◽  
V. I. Panov ◽  
S. V. Savinov ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Single Crystals ◽  
Low Temperatures ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

Scanning Tunneling Microscopy/Spectroscopy of Heavily Overdoped Bi2Sr2CuOy Single Crystals

2006 ◽  
Author(s):  
Hideki Mashima ◽  
Noritaka Fukuo ◽  
Go Kinoda ◽  
Taro Hitosugi ◽  
Toshihiro Shimada ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Single Crystals ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

Scanning Tunneling Spectroscopy in Anisotropic s-Wave Superconductors

2003 ◽  
Vol 17 (18n20) ◽  
pp. 3300-3303 ◽  
Author(s):  
H. Suderow ◽  
J. G. Rodrigo ◽  
P. Martinez-Samper ◽  
S. Vieira ◽  
J. P. Brison ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Single Crystals ◽  
Low Temperatures ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Superconducting Gap ◽  
S Wave ◽  
Tunneling Microscopy

We discuss Scanning Tunneling Microscopy and Spectroscopy (STM/S) measurements at very low temperatures in single crystals of the non magnetic borocarbide superconductors RNi 2 B 2 C ( R = Y , Lu , T c=15.5 and 16.5 K) and in MgB 2. The tunneling spectra in some regions of the surface show a clear reduction of the anisotropy of the superconducting gap.

Scanning Tunneling Microscopy and Spectroscopy of Semiconductor Surfaces

1986 ◽  
Vol 77 ◽  
Author(s):  
J. E. Demuth ◽  
R. J. Hamers ◽  
R. M. Tromp
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Local Structure ◽  
Localized States ◽  
Silicon Surfaces ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Geometric Information ◽  
Charge Densities ◽  
Surface Electronic Structure ◽  
New Information

ABSTRACTThe principles of scanning tunneling microscopy and its application to study silicon surfaces are briefly reviewed. Scanning tunneling microscopy “topographs” contain both geometric information about the locations of atoms at the surface as well as about the charge densities of surface localized states. We describe procedures by which these two components can be distinguished so as to produce images of the surface electronic states with atomic resolution. This ability to spatially resolve the surface electronic structure provides new information to understand the local structure and nature of bonding, and in some cases can be used as a means to chemically image specific features of the surface.

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