ChemInform Abstract: Chemical Vapor Deposition Precursor Chemistry. Part 2. Formation of Pure Aluminum, Alumina, and Aluminum Boride Thin Films from Boron- Containing Precursor Compounds by Chemical Vapor Deposition.

ChemInform ◽  
2010 ◽  
Vol 23 (37) ◽  
pp. no-no
Author(s):  
J. A. JUN. GLASS ◽  
S. S. KHER ◽  
J. T. SPENCER
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Pure Aluminum ◽  
Chemical Vapor ◽  
Precursor Chemistry ◽  
Aluminum Boride

scholarly journals Ruthenium complexes as precursors for chemical vapor-deposition (CVD)

RSC Advances ◽  
2014 ◽  
Vol 4 (64) ◽  
pp. 33785-33805 ◽  
Author(s):  
Ruchi Gaur ◽  
Lallan Mishra ◽  
M. Aslam Siddiqi ◽  
Burak Atakan
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ruthenium Complexes ◽  
Chemical Vapor ◽  
Precursor Chemistry

The progress in precursor chemistry for the chemical vapor deposition of ruthenium containing thin films is reviewed.

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band

NITROGEN INCORPORATED HYDROGENATED AMORPHOUS CARBON THIN FILMS DEPOSITED BY MICROWAVE SURFACE-WAVE PLASMA CHEMICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Wave ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Hydrogenated Amorphous Carbon ◽  
Plasma Chemical Vapor Deposition ◽  
Hydrogenated Amorphous

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.

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