NITROGEN INCORPORATED HYDROGENATED AMORPHOUS CARBON THIN FILMS DEPOSITED BY MICROWAVE SURFACE-WAVE PLASMA CHEMICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Wave ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Hydrogenated Amorphous Carbon ◽  
Plasma Chemical Vapor Deposition ◽  
Hydrogenated Amorphous

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.

THE INFLUENCE OF METHANE GAS PRESSURE ON THE OPTICAL, ELECTRICAL AND STRUCTURAL PROPERTIES OF NITROGENATED AMORPHOUS CARBON FILMS GROWN BY SURFACE WAVE MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION

2004 ◽  
Vol 11 (06) ◽  
pp. 553-558 ◽  
Author(s):  
M. RUSOP ◽  
A. M. M. OMER ◽  
S. ADHIKARI ◽  
S. ADHIKARY ◽  
H. MOKUTANI ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Wave ◽  
Structural Properties ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Gas Pressure ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

The influence of methane gas ( CH 4) pressure on the optical, electrical and structural properties of the nitrogenated amorphous carbon nitride ( a - C : N ) films grown by microwave surface wave plasma chemical vapor deposition (SWP-CVD) on quartz and silicon (100) substrates have been studied. The a - C : N films are deposited with varying CH 4 gas ranging from 5 to 20 ml/min. To incorporate nitrogen in the film, we have introduced nitrogen gas ( N ) at 5 ml/min in the chamber. The effects of CH 4 gas pressure on the surface morphology, composition, structure, and electrical properties of the N -incorporated camphoric carbon thin films have been investigated using scanning electron microscopy (SEM), atomic force microscopy (AFM), Auger electron spectroscopy (AES), UV-visible spectroscopy and four-probe resistance measurement. We have succeed in growing a - C : N thin films using SWP-CVD at room temperature and found that the amorphous structure of a - C films can be changed and is strongly dependent on the CH 4 gas source.

Effects of Preparation and Thermal Stability on Hydrogenated Amorphous Carbon Films by Microwave Plasma Chemical Vapor Deposition

2014 ◽  
Vol 1048 ◽  
pp. 378-382
Author(s):  
Hai Ying Xu ◽  
Cai Xia Kan ◽  
Feng Ming Pan ◽  
Chang Zong Miao
Keyword(s):  
Thermal Stability ◽  
Chemical Vapor Deposition ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Hydrogenated Amorphous Carbon ◽  
Plasma Chemical Vapor Deposition ◽  
Hydrogenated Amorphous

Hydrogenated amorphous carbon (a-C:H) films were prepared by microwave plasma chemical vapor deposition (MW-PCVD) technique with a mixture of acetylene and hydrogen. The morphology of three-phase a-C:H films, such as graphite-like, diamond-like and polymer-like were modulated by microwave power, deposition pressure, and flow ratios. Meanwhile, annealing does not seem to change the surface morphology or the film structure. The phase transitions are not found during the different annealing temperatures, showing that a-C:H films have a good thermal stability.

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