Oxygen Impurity in Cubic Boron Nitride Thin Films Prepared by Plasma-enhanced Chemical Vapor Deposition

2010 ◽  
Vol 25 (7) ◽  
pp. 748-752 ◽  
Author(s):  
Hang-Sheng YANG ◽  
Fa-Min QIU ◽  
An-Min NIE
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Cubic Boron Nitride ◽  
Chemical Vapor ◽  
Oxygen Impurity

Twin structures of rhombohedral and cubic boron nitride prepared by chemical vapor deposition method

2003 ◽  
Vol 12 (3-7) ◽  
pp. 1138-1145 ◽  
Author(s):  
Takeo Oku ◽  
Kenji Hiraga ◽  
Toshitsugu Matsuda ◽  
Toshio Hirai ◽  
Makoto Hirabayashi
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Cubic Boron Nitride ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method

Photochemical depassivation of hydrogenated (100) nitrogen surface of cubic boron nitride

1997 ◽  
Vol 12 (7) ◽  
pp. 1675-1677 ◽  
Author(s):  
Shojiro Komatsu
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Molecular Orbital ◽  
Vapor Deposition ◽  
Cubic Boron Nitride ◽  
Chemical Vapor ◽  
Molecular Orbital Calculations ◽  
Lowest Unoccupied Molecular Orbital

The passivation of the nitrogen top-layered (100) surface of cBN by hydrogen was theoretically predicted recently to be related to the difficulty of chemical vapor deposition of cubic boron nitride. The possibility of photochemical depassivation of this surface was suggested by the anti-bonding nature of the surface H–N bonds at the lowest unoccupied molecular orbital; that was demonstrated by AM1 molecular orbital calculations using large cBN clusters such as B30N32H64(2+) and B30N32H62 (2BH3).

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