Effect of oxygen partial pressure on silicon single crystal growth by floating zone technique: surface oxidation and Marangoni flow

2003 ◽  
Vol 38 (78) ◽  
pp. 619-626 ◽  
Author(s):  
Taketoshi Hibiya ◽  
Yoshihiko Asai ◽  
Masanobu Sumiji ◽  
Toshiya Kojima
Keyword(s):  
Crystal Growth ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Single Crystal ◽  
Surface Oxidation ◽  
Single Crystal Growth ◽  
Silicon Single Crystal ◽  
Marangoni Flow ◽  
Floating Zone ◽  
Effect Of Oxygen

Unsteady 3D and analytical analysis of segregation process in floating zone silicon single crystal growth

2009 ◽  
Vol 45 (4) ◽  
pp. 549-556 ◽  
Author(s):  
K. Lācis ◽  
◽  
A. Muižnieks ◽  
N. Jēkabsons ◽  
A. Rudevičs ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Silicon Single Crystal ◽  
Floating Zone ◽  
Analytical Analysis ◽  
Segregation Process

Single Crystal Growth of YBa2Cu4O8 and Y2Ba4Cu7O15 Under High Oxygen Pressure

1991 ◽  
Vol 251 ◽  
Author(s):  
T. Miyatake ◽  
T. Takata ◽  
K. Yamaguchi ◽  
K. Takamuku ◽  
N. Koshizuka ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Single Crystal ◽  
Single Crystals ◽  
Oxygen Pressure ◽  
Maximum Size ◽  
Single Crystal Growth ◽  
Mixed Gas ◽  
High Oxygen Pressure

ABSTRACTWe investigate the crystal growth of YBa2Cu4O8 (124) and Y2Ba4Cu7O15 (247) in Al2O3 crucibles at an oxygen partial pressure of 20MPa employing an O2- HIP apparatus in a mixed gas environment of Ar-20%O2. Various melts compositions, rich in Ba and Cu, are explored to optimize crystal growth of 124. Large 124 single crystals up to a size of 1×0.5×0.05mm3 are obtained from compositions with about 65˜67%CuO. 247 single crystals having a maximum size of 3×1.5×0.05mm3 are grown from the same composition of melts. 124 crystals exhibit superconductivity at 75K. 247 crystals show Tc of 20K.

Numerical simulation of point defect transport in floating-zone silicon single crystal growth

2001 ◽  
Vol 230 (1-2) ◽  
pp. 300-304 ◽  
Author(s):  
T.L. Larsen ◽  
L. Jensen ◽  
A. Lüdge ◽  
H. Riemann ◽  
H. Lemke
Keyword(s):  
Numerical Simulation ◽  
Crystal Growth ◽  
Single Crystal ◽  
Point Defect ◽  
Single Crystal Growth ◽  
Silicon Single Crystal ◽  
Floating Zone

3D Global Heat Transfer Model on Floating Zone for Silicon Single Crystal Growth

2018 ◽  
Vol 53 (5) ◽  
pp. 1700246 ◽  
Author(s):  
Xue-Feng Han ◽  
Xin Liu ◽  
Satoshi Nakano ◽  
Hirofumi Harada ◽  
Yoshiji Miyamura ◽  
...  
Keyword(s):  
Heat Transfer ◽  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Heat Transfer Model ◽  
Silicon Single Crystal ◽  
Transfer Model ◽  
Floating Zone
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