3D Global Heat Transfer Model on Floating Zone for Silicon Single Crystal Growth

2018 ◽  
Vol 53 (5) ◽  
pp. 1700246 ◽  
Author(s):  
Xue-Feng Han ◽  
Xin Liu ◽  
Satoshi Nakano ◽  
Hirofumi Harada ◽  
Yoshiji Miyamura ◽  
...  
Keyword(s):  
Heat Transfer ◽  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Heat Transfer Model ◽  
Silicon Single Crystal ◽  
Transfer Model ◽  
Floating Zone

Unsteady 3D and analytical analysis of segregation process in floating zone silicon single crystal growth

2009 ◽  
Vol 45 (4) ◽  
pp. 549-556 ◽  
Author(s):  
K. Lācis ◽  
◽  
A. Muižnieks ◽  
N. Jēkabsons ◽  
A. Rudevičs ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Silicon Single Crystal ◽  
Floating Zone ◽  
Analytical Analysis ◽  
Segregation Process

Integrated Approach for Modeling of Heat Transfer and Microdefect Formation during CZ Silicon Single Crystal Growth

2007 ◽  
Vol 131-133 ◽  
pp. 283-288 ◽  
Author(s):  
A.I. Prostomolotov ◽  
N.A. Verezub
Keyword(s):  
Heat Transfer ◽  
Crystal Growth ◽  
Single Crystal ◽  
Defect Formation ◽  
Integrated Approach ◽  
Single Crystal Growth ◽  
Silicon Single Crystal ◽  
Intrinsic Point Defect ◽  
Formation Mechanisms ◽  
Growing Conditions

The features of microdefect formation during dislocation-free Si single crystals are considered in connection with the specific thermal CZ growing conditions. For this purpose the thermal crystal growth histories are calculated by means of a global thermal mathematical model and then on their basis the intrinsic point defect recombination and microdefect formation are modeled numerically. Difficulty of such integrated approach is explained by of the complicated and conjugated thermal modeling and a presence of various temperature zones in growing single crystal, answering to various defect formation mechanisms.

Numerical simulation of point defect transport in floating-zone silicon single crystal growth

2001 ◽  
Vol 230 (1-2) ◽  
pp. 300-304 ◽  
Author(s):  
T.L. Larsen ◽  
L. Jensen ◽  
A. Lüdge ◽  
H. Riemann ◽  
H. Lemke
Keyword(s):  
Numerical Simulation ◽  
Crystal Growth ◽  
Single Crystal ◽  
Point Defect ◽  
Single Crystal Growth ◽  
Silicon Single Crystal ◽  
Floating Zone

scholarly journals Single-Crystal Growth of Sr2RuO4 by the Floating-Zone Method Using an Infrared Image Furnace with Improved Halogen Lamps

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 392
Author(s):  
Naoki Kikugawa ◽  
Dmitry A. Sokolov ◽  
Tohru Nagasawa ◽  
Andrew P. Mackenzie
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Infrared Image ◽  
Single Crystal Growth ◽  
Molten Zone ◽  
Floating Zone ◽  
Unconventional Superconductor ◽  
Zone Method ◽  
Floating Zone Method ◽  
Halogen Lamps

We report the single-crystal growth of the unconventional superconductor Sr2RuO4, on which research has reached a turning point recently. In order to optimize the quality of crystals grown by the floating-zone method using an infrared image furnace, we focus on an improvement of the structure of the filament in the halogen lamps. By reducing the thickness of the total filament, the form of the molten zone was narrowed. More importantly, the molten zone was observed to be more stable during the growth process. Finally, we obtained the crystals with a length of 12 cm. Additionally, the grown crystal has high quality, displaying the 1.5 K transition temperature expected only for the purest crystals. We also discuss the availability of the newly developed halogen lamps.

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