We are in the process of designing and fabricating a very large area (> 4mm2) and extremely low dark current silicon carbide ultraviolet photodiode with a readout circuitry monolithically fabricated on the same die. This is a large area silicon carbide based active pixel sensor (APS), capable of measuring low power density deep ultraviolet photons as well as low energy particles. To this end, we have already fabricated several large area photodiodes with low dark current values and large ultraviolet responsivities. We here report the electrical and optical measured performance of various size photodiodes we have fabricated.
Radiation hardness of a large area CMOS active pixel sensor for bio-medical applications