Large Area Silicon Carbide Photodiode, and Monolithic Readout Design and Fabrication

2016 ◽  
Vol 858 ◽  
pp. 1023-1027
Author(s):  
Akin Akturk ◽  
Brendan Cusack ◽  
Neil Goldsman
Keyword(s):  
Silicon Carbide ◽  
Low Power ◽  
Power Density ◽  
Dark Current ◽  
Low Energy ◽  
Large Area ◽  
Active Pixel Sensor ◽  
Active Pixel ◽  
Deep Ultraviolet ◽  
Ultraviolet Photons

We are in the process of designing and fabricating a very large area (> 4mm2) and extremely low dark current silicon carbide ultraviolet photodiode with a readout circuitry monolithically fabricated on the same die. This is a large area silicon carbide based active pixel sensor (APS), capable of measuring low power density deep ultraviolet photons as well as low energy particles. To this end, we have already fabricated several large area photodiodes with low dark current values and large ultraviolet responsivities. We here report the electrical and optical measured performance of various size photodiodes we have fabricated.

scholarly journals The APS+ and intelligent active pixel sensor centered on low power

2019 ◽  
Author(s):  
Ning Xie ◽  
Albert Theuwissen ◽  
Bernhard Büttgen ◽  
Henk Hakkesteegt ◽  
Henk Jansen ◽  
...  
Keyword(s):  
Low Power ◽  
Active Pixel Sensor ◽  
Active Pixel

scholarly journals A Design of a New Column-Parallel Analog-to-Digital Converter Flash for Monolithic Active Pixel Sensor

2017 ◽  
Vol 2017 ◽  
pp. 1-15 ◽  
Author(s):  
Mostafa Chakir ◽  
Hicham Akhamal ◽  
Hassan Qjidaa
Keyword(s):  
Low Power ◽  
Input Signal ◽  
Small Area ◽  
High Speed ◽  
Analog To Digital Converter ◽  
Digital Converter ◽  
Active Pixel Sensor ◽  
Analog To Digital ◽  
Active Pixel ◽  
5 Ghz

The CMOS Monolithic Active Pixel Sensor (MAPS) for the International Linear Collider (ILC) vertex detector (VXD) expresses stringent requirements on their analog readout electronics, specifically on the analog-to-digital converter (ADC). This paper concerns designing and optimizing a new architecture of a low power, high speed, and small-area 4-bit column-parallel ADC Flash. Later in this study, we propose to interpose an S/H block in the converter. This integration of S/H block increases the sensitiveness of the converter to the very small amplitude of the input signal from the sensor and provides a sufficient time to the converter to be able to code the input signal. This ADC is developed in 0.18 μm CMOS process with a pixel pitch of 35 μm. The proposed ADC responds to the constraints of power dissipation, size, and speed for the MAPS composed of a matrix of 64 rows and 48 columns where each column ADC covers a small area of 35 × 336.76 μm2. The proposed ADC consumes low power at a 1.8 V supply and 100 MS/s sampling rate with dynamic range of 125 mV. Its DNL and INL are 0.0812/−0.0787 LSB and 0.0811/−0.0787 LSB, respectively. Furthermore, this ADC achieves a high speed more than 5 GHz.

Active pixel sensor architectures for large area medical imaging

2002 ◽  
Vol 299-302 ◽  
pp. 1250-1255 ◽  
Author(s):  
Karim S. Karim ◽  
Arokia Nathan ◽  
John A. Rowlands
Keyword(s):  
Medical Imaging ◽  
Large Area ◽  
Active Pixel Sensor ◽  
Active Pixel
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