Improvement of charge minority-carrier lifetime inp(boron)-type Czochralski silicon by rapid thermal annealing

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pp. 417-424 ◽  
Author(s):  
Ji Youn Lee ◽  
Stefan Peters ◽  
Stefan Rein ◽  
Stefan W. Glunz
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John D. Murphy ◽  
Karsten Bothe ◽  
Massimiliano Olmo ◽  
Vladimir V. Voronkov ◽  
Robert J. Falster

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B. Hallam ◽  
C. Chan ◽  
M. Abbott ◽  
S. Wenham

2009 ◽  
Vol 106 (1) ◽  
pp. 013721 ◽  
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Raira Gotoh ◽  
Kozo Fujiwara ◽  
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2001 ◽  
Vol 90 (5) ◽  
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S. W. Glunz ◽  
S. Rein ◽  
J. Y. Lee ◽  
W. Warta

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Craig P Taylor ◽  
Michael Venuti ◽  
Serena Eley ◽  
Vincenzo LaSalvia ◽  
...  

Boron-doped Czochralski (Cz) Si is the most commonly used semiconductor in the fabrication of solar cells. The minority carrier lifetime in boron-doped Cz Si decreases upon light exposure due to...


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Vol 25 (2) ◽  
pp. 651-653
Author(s):  
Zhu Xin ◽  
Yang De-Ren ◽  
Li Ming ◽  
Chen Tao ◽  
Wang Lei ◽  
...  

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Yixin Yan ◽  
Nels P. Ostrom ◽  
Jinwoo Kim ◽  
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pp. 137-144 ◽  
Author(s):  
J. D. Murphy ◽  
K. Bothe ◽  
R. Krain ◽  
V. V. Voronkov ◽  
R. J. Falster

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