(Invited) The Impact of Oxide Precipitates on Minority Carrier Lifetime in Czochralski Silicon

2013 ◽  
Vol 50 (5) ◽  
pp. 137-144 ◽  
Author(s):  
J. D. Murphy ◽  
K. Bothe ◽  
R. Krain ◽  
V. V. Voronkov ◽  
R. J. Falster
2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.


2019 ◽  
Vol 33 (11) ◽  
pp. 121-132 ◽  
Author(s):  
John D. Murphy ◽  
Karsten Bothe ◽  
Massimiliano Olmo ◽  
Vladimir V. Voronkov ◽  
Robert J. Falster

2009 ◽  
Vol 106 (1) ◽  
pp. 013721 ◽  
Author(s):  
Mukannan Arivanandhan ◽  
Raira Gotoh ◽  
Kozo Fujiwara ◽  
Satoshi Uda

2007 ◽  
Vol 131-133 ◽  
pp. 1-8 ◽  
Author(s):  
Nathan Stoddard ◽  
Bei Wu ◽  
Ian Witting ◽  
Magnus C. Wagener ◽  
Yongkook Park ◽  
...  

A novel crystal growth method has been developed for the production of ingots, bricks and wafers for solar cells. Monocrystallinity is achievable over large volumes with minimal dislocation incorporation. The resulting defect types, densities and interactions are described both microscopically for wafers and macroscopically for the ingot, looking closely at the impact of the defects on minority carrier lifetime. Solar cells of 156 cm2 size have been produced ranging up to 17% in efficiency using industrial screen print processes.


2001 ◽  
Vol 90 (5) ◽  
pp. 2397-2404 ◽  
Author(s):  
S. W. Glunz ◽  
S. Rein ◽  
J. Y. Lee ◽  
W. Warta

2011 ◽  
Vol 8 ◽  
pp. 288-293 ◽  
Author(s):  
Florian Sevenig ◽  
Lena Breitenstein ◽  
Antje Oltersdorf ◽  
Karin Zimmermann ◽  
Martin Hermle

Author(s):  
Abigail Rose Meyer ◽  
Craig P Taylor ◽  
Michael Venuti ◽  
Serena Eley ◽  
Vincenzo LaSalvia ◽  
...  

Boron-doped Czochralski (Cz) Si is the most commonly used semiconductor in the fabrication of solar cells. The minority carrier lifetime in boron-doped Cz Si decreases upon light exposure due to...


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