Deep level transient spectroscopy and minority carrier lifetime study on Ga-doped continuous Czochralski silicon

2012 ◽  
Vol 101 (22) ◽  
pp. 222107 ◽  
Author(s):  
Yohan Yoon ◽  
Yixin Yan ◽  
Nels P. Ostrom ◽  
Jinwoo Kim ◽  
George Rozgonyi
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Deep Level ◽  
Minority Carrier Lifetime ◽  
Czochralski Silicon ◽  
Transient Spectroscopy

Reduction of Traps and Improvement of Carrier Lifetime in SiC Epilayer by Ion Implantation

2007 ◽  
Vol 556-557 ◽  
pp. 603-606 ◽  
Author(s):  
L. Storasta ◽  
Hidekazu Tsuchida
Keyword(s):  
Surface Layer ◽  
Detection Limit ◽  
Ion Implantation ◽  
Deep Level Transient Spectroscopy ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Deep Level ◽  
Minority Carrier Lifetime ◽  
Carbon Ion ◽  
Transient Spectroscopy

Reduction in deep level defects and increase of carrier lifetime in 4H-SiC epilayer was observed after carbon ion implantation into the shallow surface layer of 250 nm and subsequent annealing above 1400 °C. The concentration of Z1/2 and EH6/7 traps was determined by deep level transient spectroscopy 4 μm below the implanted layer. After annealing, concentration of both traps decreased from 1013 cm-3 range to below the detection limit. Minority carrier lifetime almost doubled in the implanted samples compared to the unimplanted samples. We suggest that carbon interstitials from the implanted layer in-diffuse into the layer underneath during annealing and annihilate with carbon vacancies. Our results indicate that Z1/2 and EH6/7 traps are most likely carbon vacancy related.

Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC

2013 ◽  
Vol 740-742 ◽  
pp. 633-636 ◽  
Author(s):  
Birgit Kallinger ◽  
Patrick Berwian ◽  
Jochen Friedrich ◽  
Mathias Rommel ◽  
Maral Azizi ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Deep Level ◽  
Surface Recombination ◽  
Minority Carrier Lifetime ◽  
Structural Defects ◽  
Effective Lifetime ◽  
Recombination Lifetime ◽  
Photoconductivity Decay ◽  
Transient Spectroscopy

4H-SiC homoepitaxial layers with different thicknesses from 12.5 µm up to 50 µm were investigated by microwave-detected photoconductivity decay (µ-PCD), deep level transient spectroscopy (DLTS) and defect selective etching (DSE) to shed light on the influence of the epilayer thickness and structural defects on the effective minority carrier lifetime. It is shown that the effective lifetime, resulting directly from the µ-PCD measurement, is significantly influenced by the surface recombination lifetime. Therefore, an adequate correction of the measured data is necessary to determine the bulk lifetime. The bulk lifetime of these epilayers is in the order of several microseconds. Furthermore, areas with high dislocation density are correlated to areas with locally reduced effective lifetime.

scholarly journals Kinetics Modeling of the Carbon Vacancy Thermal Equilibration in 4H-SiC

2018 ◽  
Vol 924 ◽  
pp. 233-236
Author(s):  
Hussein M. Ayedh ◽  
Roberta Nipoti ◽  
Anders Hallén ◽  
Bengt Gunnar Svensson
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Deep Level ◽  
Minority Carrier Lifetime ◽  
Carbon Vacancy ◽  
Different Temperatures ◽  
Pair Generation ◽  
High Temperature Processing ◽  
Transient Spectroscopy ◽  
And Diffusion

The carbon vacancy (VC) is a major limiting-defect of minority carrier lifetime in n-type 4H-SiC epitaxial layers and it is readily formed during high temperature processing. In this study, a kinetics model is put forward to address the thermodynamic equilibration of VC, elucidating the possible atomistic mechanisms that control the VC equilibration under C-rich conditions. Frenkel pair generation, injection of carbon interstitials (Ci’s) from the C-rich surface, followed by recombination with VC’s, and diffusion of VC’s towards the surface appear to be the major mechanisms involved. The modelling results show a close agreement with experimental deep-level transient spectroscopy (DLTS) depth profiles of VC after annealing at different temperatures.

Minority Carrier Lifetime in Czochralski Silicon Containing Oxide Precipitates

2019 ◽  
Vol 33 (11) ◽  
pp. 121-132 ◽  
Author(s):  
John D. Murphy ◽  
Karsten Bothe ◽  
Massimiliano Olmo ◽  
Vladimir V. Voronkov ◽  
Robert J. Falster
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Czochralski Silicon

Current-Mode Deep Level Spectroscopy of Vanadium-Doped HPSI 4H-SiC

2020 ◽  
Vol 1004 ◽  
pp. 331-336
Author(s):  
Giovanni Alfieri ◽  
Lukas Kranz ◽  
Andrei Mihaila
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Scientific Community ◽  
Minority Carrier ◽  
Deep Level ◽  
Current Mode ◽  
Low Energy ◽  
The Other ◽  
Carrier Trap ◽  
Low Energy Electron ◽  
Transient Spectroscopy

SiC has currently attracted the interest of the scientific community for qubit applications. Despite the importance given to the properties of color centers in high-purity semi-insulating SiC, little is known on the electronic properties of defects in this material. In our study, we investigated the presence of electrically active levels in vanadium-doped substrates. Current mode deep level transient spectroscopy, carried out in the dark and under illumination, together with 1-D simulations showed the presence of two electrically active levels, one associated to a majority carrier trap and the other one to a minority carrier trap. The nature of the detected defects has been discussed in the light of the characterization performed on low-energy electron irradiated substrates and previous results found in the literature.

scholarly journals Deep levels in n-type Schottky and p+-n homojunction GaN diodes

2000 ◽  
Vol 5 (S1) ◽  
pp. 922-928
Author(s):  
A. Hierro ◽  
D. Kwon ◽  
S. A. Ringel ◽  
M. Hansen ◽  
U. K. Mishra ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Schottky Diodes ◽  
Yellow Luminescence ◽  
Arrhenius Behavior ◽  
Electron Level ◽  
Transient Spectroscopy ◽  
Electron And Hole Traps

The deep level spectra in both p+-n homojunction and n-type Schottky GaN diodes are studied by deep level transient spectroscopy (DLTS) in order to compare the role of the junction configuration on the defects found within the n-GaN layer. Both majority and minority carrier DLTS measurements are performed on the diodes allowing the observation of both electron and hole traps in n-GaN. An electron level at Ec−Et=0.58 and 0.62 V is observed in the p+-n and Schottky diodes, respectively, with a concentration of ∼3−4×1014 cm−3 and a capture cross section of ∼1−5×10−15 cm2. The similar Arrhenius behavior indicates that both emissions are related to the same defect. The shift in activation energy is correlated to the electric field enhanced-emission in the p+-n diode, where the junction barrier is much larger. The p+-n diode configuration allows the observation of a hole trap at Et−Ev=0.87 eV in the n-GaN which is very likely related to the yellow luminescence band.

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