H2 and N2 Remote Plasma Processing of Wurtzite-Like Oxides: Implications for Energy Applications

2015 ◽  
Vol 13 (1) ◽  
pp. 147-160 ◽  
Author(s):  
Maria M. Giangregorio ◽  
Giuseppe V. Bianco ◽  
Pio Capezzuto ◽  
Giovanni Bruno ◽  
Maria Losurdo
Keyword(s):  
Plasma Processing ◽  
Remote Plasma ◽  
Energy Applications

Ultrathin silicon oxynitride films grown by Ar/N2O remote plasma processing

1998 ◽  
Vol 83 (12) ◽  
pp. 7635-7639 ◽  
Author(s):  
Bradley C. Smith ◽  
H. Henry Lamb
Keyword(s):  
Plasma Processing ◽  
Silicon Oxynitride ◽  
Remote Plasma

Evaluation of silicon oxide cleaning using F2∕Ar remote plasma processing

2005 ◽  
Vol 23 (4) ◽  
pp. 911-916 ◽  
Author(s):  
S. C. Kang ◽  
J. Y. Hwang ◽  
N.-E. Lee ◽  
K. S. Joo ◽  
G. H. Bae
Keyword(s):  
Silicon Oxide ◽  
Plasma Processing ◽  
Remote Plasma

Investigation of plasma oxynitridation of Si(001) by NH3/N2O/Ar remote plasma processing

2005 ◽  
Vol 193 (1-3) ◽  
pp. 350-355 ◽  
Author(s):  
S.C. Kang ◽  
C.H. Oh ◽  
N.-E. Lee ◽  
T.K. Kwon
Keyword(s):  
Plasma Processing ◽  
Remote Plasma

Device-quality GaN–dielectric interfaces by 300°C remote plasma processing

2003 ◽  
Vol 216 (1-4) ◽  
pp. 119-123 ◽  
Author(s):  
C Bae ◽  
G.B Rayner ◽  
G Lucovsky
Keyword(s):  
Plasma Processing ◽  
Remote Plasma ◽  
Dielectric Interfaces

Independent Tunneling Reductions Relative to Homogeneous Oxide Dielectrics From i) Nitrided Interfaces, and ii) Physically-Thicker Stacked Oxide/Nitride and Oxide/Oxynitride Gate Dielectrics

1999 ◽  
Vol 592 ◽  
Author(s):  
Gerry Lucovsky ◽  
Yider Wu ◽  
Yi-Mu Lee ◽  
Hanyang Yang ◽  
Hiro Niimi
Keyword(s):  
Silicon Nitride ◽  
Gate Dielectrics ◽  
Plasma Processing ◽  
Tunneling Current ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
Remote Plasma ◽  
Thermally Grown Oxides ◽  
Interfacial Layers ◽  
Direct Tunneling

ABSTRACTDirect tunneling limits aggressive scaling of thermally-grown oxides to about 1.6 nm, a thickness at which the tunneling current. Jg, at one volt is ∼1 A/cm2. This paper presents results that demonstrate that stacked gate dielectrics prepared by remote plasma processing that include i) ultra-thin nitrided SiO2 interfacial layers, and ii) either silicon nitride or oxynitride bulk dielectrics can extend the equivalent oxide thickness, EOT, to 1.1-1.0 nm before Jg, > 1 A/cm2.

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